Datasheet > VSSC8L45-M3/9AT

VSSC8L45-M3/9AT

更新时间： 2024-11-18 22:52:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	91K
描述
DIODE SCHOTTKY 45V 4.9A DO214AB

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中文翻译

获取价格

数据手册

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VSSC8L45-M3/9AT 数据手册

VSSC8L45-M3

Vishay General Semiconductor

www.vishay.com

Surface-Mount TMBS^®(Trench MOS Barrier Schottky) Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Trench MOS Schottky technology

• Low power losses, high efficiency

• Low forward voltage drop

SMC (DO-214AB)

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Cathode

Anode

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

For use in high frequency converters, freewheeling diodes,

DC/DC converters and polarity protection applications.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMC (DO-214AB)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

8.0 A

45 V

V_RRM

Base P/N-M3

commercial grade

halogen-free and RoHS-compliant,

I_FSM

V_Fat I_F= 8.0 A (T_A= 125 °C)

T_Jmax.

140 A

0.39 V

150 °C

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

Package

SMC (DO-214AB)

Single

Circuit configuration

Polarity: color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VSSC8L45

8L45

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

8.0

Maximum DC forward current

(2)

I_F

4.9

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

140

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Notes

(1)

Units mounted on 3 cm x 3 cm Aluminum, 2 oz. PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 27-Oct-2020

Document Number: 87793

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与VSSC8L45-M3/9AT相关器件

型号	品牌	获取价格	描述	数据表
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VS-SD1053C18S20L	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1050A, 1800V V(RRM), Silicon, DO-200AB,
VS-SD1053C22S20L	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1050A, 2200V V(RRM), Silicon, DO-200AB,
VS-SD1053C24S20L	VISHAY	获取价格	Rectifier Diode,
VS-SD1053C25S20L	VISHAY	获取价格	暂无描述
VS-SD1053C25S30L	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 920A, 2500V V(RRM), Silicon, DO-200AB,
VS-SD1053C28S30L	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 920A, 2800V V(RRM), Silicon, DO-200AB,
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