Datasheet > VSKH250-20

VSKH250-20

更新时间： 2024-09-20 14:23:23

品牌	Logo	应用领域
威世 - VISHAY		局域网栅栅极
页数	文件大小	规格书
12页	313K
描述
Silicon Controlled Rectifier, 555A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 2 Element, ROHS COMPLIANT, MAGN-A-PAK-5

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VSKH250-20 技术参数

生命周期：	Active	包装说明：	FLANGE MOUNT, R-PUFM-X5
针数：	5	Reach Compliance Code：	unknown
HTS代码：	8541.30.00.80	风险等级：	5.16
Is Samacsys：	N	外壳连接：	ISOLATED
配置：	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	最大直流栅极触发电流：	200 mA
JESD-30 代码：	R-PUFM-X5	元件数量：	2
端子数量：	5	最高工作温度：	130 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	最大均方根通态电流：	555 A
断态重复峰值电压：	2000 V	重复峰值反向电压：	2000 V
表面贴装：	NO	端子形式：	UNSPECIFIED
端子位置：	UPPER	触发设备类型：	SCR
Base Number Matches：	1

VSKH250-20 数据手册

VSK.170PbF, VSK.250PbF Series

www.vishay.com

Vishay Semiconductors

SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 170 A/250 A

FEATURES

• High voltage

• Electrically isolated base plate

• 3500 V_RMSisolating voltage

• Industrial standard package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL approved file E78996

• Designed and qualified for industrial level

MAGN-A-PAK

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

This new VSK series of MAGN-A-PAK modules uses high

voltage power thyristor/thyristor and thyristor/diode in

seven basic configurations. The semiconductors are

electrically isolated from the metal base, allowing common

heatsinks and compact assemblies to be built. They can be

interconnected to form single phase or three phase bridges

or as AC-switches when modules are connected in

anti-parallel mode. These modules are intended for general

purpose applications such as battery chargers, welders,

motor drives, UPS, etc.

PRODUCT SUMMARY

I_T(AV)

170 A/250 A

Type

Modules - Thyristor, Standard

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VSK.170..

170

VSK.250..

250

UNITS

I_T(AV)

85 °C

I_T(RMS)

377

555

50 Hz

60 Hz

50 Hz

60 Hz

5100

8500

I_TSM

5350

8900

131

361

I²t

kA²s

119

330

I²t

1310

3610

kA²s

V_DRM/V_RRM

Up to 1600

Up to 2000

T_J

Range

- 40 to 130

°C

Revision: 02-Jul-10

Document Number: 94417

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...12

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与VSKH250-20相关器件

型号	品牌	获取价格	描述	数据表
VSKH26/04	VISHAY	获取价格	Silicon Controlled Rectifier, 42.39A I(T)RMS, 27000mA I(T), 400V V(DRM), 400V V(RRM), 1 El
VSKH26/04P	VISHAY	获取价格	Silicon Controlled Rectifier, 42.39A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-240A
VSKH26/04S90P	VISHAY	获取价格	Silicon Controlled Rectifier, 42.39A I(T)RMS, 26000mA I(T), 400V V(DRM), 400V V(RRM), 1 El
VSKH26/06	VISHAY	获取价格	Silicon Controlled Rectifier, 42.39A I(T)RMS, 27000mA I(T), 600V V(DRM), 600V V(RRM), 1 El
VSKH26/08	VISHAY	获取价格	Silicon Controlled Rectifier, 42.39A I(T)RMS, 27000mA I(T), 800V V(DRM), 800V V(RRM), 1 El
VSKH26/08P	VISHAY	获取价格	Silicon Controlled Rectifier, 42.39A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-240A
VSKH26/08S90P	VISHAY	获取价格	Silicon Controlled Rectifier, 42.39A I(T)RMS, 26000mA I(T), 800V V(DRM), 800V V(RRM), 1 El
VSKH26/10	VISHAY	获取价格	Silicon Controlled Rectifier, 42.39A I(T)RMS, 27000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
VSKH26/10P	VISHAY	获取价格	Silicon Controlled Rectifier, 42.39A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-24
VSKH26/10S90P	VISHAY	获取价格	Silicon Controlled Rectifier, 42.39A I(T)RMS, 26000mA I(T), 1000V V(DRM), 1000V V(RRM), 1

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