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VSKH26/04S90P PDF预览

VSKH26/04S90P

更新时间： 2024-09-20 17:15:47
品牌 Logo 应用领域
威世 - VISHAY 局域网栅栅极
页数 文件大小 规格书
9页 211K
描述
Silicon Controlled Rectifier, 42.39A I(T)RMS, 26000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-240AA, ROHS COMPLIANT, ADD-A-PAK-5

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VSKH26/04S90P 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-240AA
包装说明：FLANGE MOUNT, R-XUFM-X5针数：5
Reach Compliance Code：compliantHTS代码：8541.30.00.80
风险等级：5.72外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最大直流栅极触发电流：150 mA
最大直流栅极触发电压：1.7 V快速连接描述：G-GR
螺丝端子的描述：A-K-AK最大维持电流：200 mA
JEDEC-95代码：TO-240AAJESD-30 代码：R-XUFM-X5
最大漏电流：15 mA通态非重复峰值电流：490 A
元件数量：1端子数量：5
最大通态电流：26000 A最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：42.39 A断态重复峰值电压：400 V
重复峰值反向电压：400 V子类别：Silicon Controlled Rectifiers
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SCRBase Number Matches：1

VSKH26/04S90P 数据手册

 浏览型号VSKH26/04S90P的Datasheet PDF文件第2页浏览型号VSKH26/04S90P的Datasheet PDF文件第3页浏览型号VSKH26/04S90P的Datasheet PDF文件第4页浏览型号VSKH26/04S90P的Datasheet PDF文件第5页浏览型号VSKH26/04S90P的Datasheet PDF文件第6页浏览型号VSKH26/04S90P的Datasheet PDF文件第7页 
VSK.26..PbF Series  
Vishay High Power Products  
Thyristor/Diode and Thyristor/Thyristor  
(ADD-A-PAKTM Generation 5 Power Modules), 27 A  
FEATURES  
• High voltage  
• Industrial standard package  
• Thick copper baseplate  
• UL E78996 approved  
• 3500 VRMS isolating voltage  
• Totally lead (Pb)-free  
RoHS  
COMPLIANT  
• Designed and qualified for industrial level  
ADD-A-PAKTM  
BENEFITS  
• Up to 1600 V  
PRODUCT SUMMARY  
IT(AV) or IF(AV)  
27 A  
• Fully compatible TO-240AA  
• High surge capability  
• Easy mounting on heatsink  
• Al203 DBC insulator  
• Heatsink grounded  
MECHANICAL DESCRIPTION  
The Generation 5 of ADD-A-PAKTM modules combine the  
excellent thermal performance obtained by the usage of  
Direct Bonded Copper substrate with superior mechanical  
ruggedness, thanks to the insertion of a solid copper  
baseplate at the bottom side of the device. The Cu baseplate  
allows an easier mounting on the majority of heatsink with  
increased tolerance of surface roughness and improved  
thermal spread. The Generation 5 of AAP modules is  
manufactured without hard mold, eliminating in this way any  
possible direct stress on the leads.  
ELECTRICAL DESCRIPTION  
These modules are intended for general purpose high  
voltage applications such as high voltage regulated power  
supplies, lighting circuits, temperature and motor speed  
control circuits, UPS and battery chargers.  
The electrical terminals are secured against axial pull-out:  
they are fixed to the module housing via a click-stop feature  
already tested and proved as reliable on other Vishay HPP  
modules.  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
27  
UNITS  
I
T(AV) or IF(AV)  
85 °C  
IO(RMS)  
As AC switch  
50 Hz  
60  
A
400  
ITSM,  
IFSM  
60 Hz  
420  
800  
50 Hz  
I2t  
A2s  
60 Hz  
730  
I2√t  
VRRM  
TStg  
TJ  
8000  
A2√s  
Range  
400 to 1600  
V
- 40 to 125  
°C  
Document Number: 94418  
Revision: 22-Apr-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
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与VSKH26/04S90P相关器件

型号 品牌 获取价格 描述 数据表
VSKH26/06 VISHAY

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 		Silicon Controlled Rectifier, 42.39A I(T)RMS, 27000mA I(T), 600V V(DRM), 600V V(RRM), 1 El
VSKH26/08 VISHAY

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 		Silicon Controlled Rectifier, 42.39A I(T)RMS, 27000mA I(T), 800V V(DRM), 800V V(RRM), 1 El
VSKH26/08P VISHAY

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 		Silicon Controlled Rectifier, 42.39A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-240A
VSKH26/08S90P VISHAY

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 		Silicon Controlled Rectifier, 42.39A I(T)RMS, 26000mA I(T), 800V V(DRM), 800V V(RRM), 1 El
VSKH26/10 VISHAY

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 		Silicon Controlled Rectifier, 42.39A I(T)RMS, 27000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
VSKH26/10P VISHAY

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 		Silicon Controlled Rectifier, 42.39A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-24
VSKH26/10S90P VISHAY

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 		Silicon Controlled Rectifier, 42.39A I(T)RMS, 26000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
VSKH26/12 VISHAY

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 		Silicon Controlled Rectifier, 42.39A I(T)RMS, 27000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
VSKH26/12P VISHAY

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 		Silicon Controlled Rectifier, 42.39A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-24
VSKH26/12S90P VISHAY

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 		Silicon Controlled Rectifier, 42.39A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-24

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