Datasheet > VSKDS409_11

VSKDS409_11

更新时间： 2024-09-19 08:18:15

品牌	Logo	应用领域
威世 - VISHAY		电源电路
页数	文件大小	规格书
7页	125K
描述
ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A

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VSKDS409_11 数据手册

VSKDS409/150

Vishay Semiconductors

ADD-A-PAK Generation VII

Power Modules Schottky Rectifier, 200 A

FEATURES

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• Low thermal resistance

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Excellent thermal performances obtained by the usage of

exposed direct bonded copper substrate

ADD-A-PAK

• High surge capability

PRODUCT SUMMARY

• Easy mounting on heatsink

I_F(AV)

200 A

ELECTRICAL DESCRIPTION

The VSKDS409/150 Schottky rectifier doubler module has

been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable

operation up to 175 °C junction temperature.

Typical applications are in high current switching power

supplies, plating power supplies, UPS systems, converters,

freewheeling diodes, welding, and reverse battery

protection.

MECHANICAL DESCRIPTION

The ADD-A-PAK generation VII, new generation of

ADD-A-PAK module, combines the excellent thermal

performances obtained by the usage of exposed direct

bonded copper substrate, with advanced compact simple

package solution and simplified internal structure with

minimized number of interfaces.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

200

UNITS

Rectangular waveform

150

t_p= 5 μs sine

200 Apk, T_J= 125 °C

Range

20 000

0.85

V_F

T_J

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VSKDS409/150

UNITS

Maximum DC reverse voltage

Maximum static peak reverse voltage

V_R

150

V_RRM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

I_F(AV)

50 % duty cycle at T_C= 105 °C, rectangular waveform

200

Following any rated

load condition and with

rated V_RRMapplied

5 μs sine or 3 μs rect. pulse

20 000

Maximum peak one cycle

non-repetitive surge current

I_FSM

10 ms sine or 6 ms rect. pulse

2300

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1.8 A, L = 10 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Maximum dynamic peak reverse voltage

V_AV

T_J= 25 °C, I_AS= 1.8 A, L = 10 mH

170

Document Number: 94649

Revision: 13-Jan-11

For technical questions, contact: indmodules@vishay.com

www.vishay.com

12 3 4 5 6 7

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与VSKDS409_11相关器件

型号	品牌	获取价格	描述	数据表
VSKDS409-150	VISHAY	获取价格	ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A
VSKDS440	VISHAY	获取价格	Schottky Rectifier, 220 A
VSKDS440/030P	VISHAY	获取价格	Schottky Rectifier, 220 A
VSKDS440_09	VISHAY	获取价格	ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 220 A
VSKDS440-030	VISHAY	获取价格	ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 220 A
VSKDU162	VISHAY	获取价格	HEXFRED Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules)
VSKDU162/12PBF	VISHAY	获取价格	HEXFRED? Ultrafast Diodes, 100 A (New INT-A-PAKTM Power Modules)
VSKDU162_08	VISHAY	获取价格	HEXFRED Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules)
VSKDU162-12PBF	VISHAY	获取价格	HEXFRED Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules)
VSKDU300	VISHAY	获取价格	INT-A-PAK Power Modules Ultrafast Diodes, 300 A

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