Datasheet > VSKDU162

VSKDU162

更新时间： 2024-09-19 08:18:15

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
7页	176K
描述
HEXFRED Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules)

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数据手册

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VSKDU162 数据手册

VSKDU162/12PbF

Vishay High Power Products

HEXFRED^®Ultrafast Diodes, 100 A

(New INT-A-PAK Power Modules)

FEATURES

• Electrically isolated: DBC base plate

• Standard JEDEC package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL approved file E78996

• Case style New INT-A-PAK

New INT-A-PAK

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

PRODUCT SUMMARY

V_R

1200 V

2.5 V

V_F(typical)

_rr(typical)

150 ns

I_F(DC)at T_C

110 A at 100 °C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

1200

205

UNITS

Cathode to anode voltage

V_R

T_C= 25 °C

_C= 100 °C

Continuous forward current

Single pulse forward current

Maximum power dissipation

RMS isolation voltage

I_F

110

I_FSM

P_D

Limited by junction temperature

T_C= 25 °C

800

695

_C= 100 °C

280

V_ISOL

50 Hz, circuit to base, all terminal shorted, t = 1 s

3500

Operating junction and storage

temperature range

T_J, T_Stg

- 40 to + 150

°C

ELECTRICAL SPECIFICATIONS PER LEG (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Cathode to anode

breakdown voltage

V_BR

I_R= 100 μA

1200

I_F= 100 A

I_F= 160 A

2.5

2.9

3.2

3.9

Maximum forward voltage

V_FM

I_RM

Maximum reverse leakage current

T_J= 150 °C, V_R= 1200 V

Document Number: 94512

Revision: 04-May-10

For technical questions, contact: indmodules@vishay.com

www.vishay.com

12 3 4 5 6 7

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