Datasheet > VSB20L45-M3/73

VSB20L45-M3/73

更新时间： 2024-09-17 08:18:31

品牌	Logo	应用领域
威世 - VISHAY		电池
页数	文件大小	规格书
5页	92K
描述
Photovoltaic Solar Cell Protection Schottky Rectifier

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VSB20L45-M3/73 数据手册

VSB20L45

Vishay General Semiconductor

www.vishay.com

Photovoltaic Solar Cell Protection Schottky Rectifier

Ultra Low V_F= 0.26 V at I_F= 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

• Low forward voltage drop, low power losses

• High efficiency operation

• High forward surge capability

• ESD capability

P600

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• T_J200 °C max. in solar by-pass mode application

• Compliant to RoHS Directive 2011/65/EU

• Halogen-free according to IEC 61249-2-21 definition

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

I_F(DC)

20 A

45 V

V_RRM

I_FSM

250 A

0.40 V

150 °C

200 °C

V_Fat I_F= 20 A

_OPmax. (AC mode)

MECHANICAL DATA

Case: P600

Molding compound meets UL 94 V-0 flammability rating

T_Jmax. (DC forward current)

Base P/N-M3

- halogen-free, RoHS compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VSB20L45

V20L45

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum average forward rectified current (fig. 1)

(2)

I_F(AV)

7.5

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

250

Operating junction temperature range (AC mode)

Storage temperature range

T_OP

- 40 to + 150

- 40 to + 175

T_STG

°C

Junction temperature in DC forward current

without reverse bias, t  1 h

(3)

T_J

 200

Notes

(1)

(2)

(3)

With heatsink

Without heatsink, free air

Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test

Revision: 02-Mar-12

Document Number: 89480

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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VSB2200S-M3/54	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AL, DO-41,
VSB2200S-M3/73	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AL, DO-41,
VSB2200S-M3-54	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
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