Datasheet > VSB2200S_12

VSB2200S_12

更新时间： 2022-03-30 12:17:52

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
4页	89K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

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VSB2200S_12 数据手册

New Product

VSB2200S

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

TMBS^®

• Low forward voltage drop, low power

losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-204AL (DO-41)

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21

PRIMARY CHARACTERISTICS

definition

I_F(AV)

2.0 A

200 V

40 A

V_RRM

MECHANICAL DATA

I_FSM

Case: DO-204AL (DO-41)

Molding compound meets UL 94 V-0 flammability

rating

V_Fat I_F= 2.0 A

T_Jmax.

0.65 V

150 °C

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

TYPICAL APPLICATIONS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

For use in high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters or polarity protection application.

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

I_F(AV)

VSB2200S

200

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1) ⁽¹⁾

2.0

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

Voltage rate of change (rated V_R)

dV/dt

10 000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Note

⁽¹⁾Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air

Document Number: 89142

Revision: 29-Sep-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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