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VSB1545-M3 PDF预览

VSB1545-M3

更新时间: 2024-11-14 01:23:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 89K
描述
High efficiency operation

VSB1545-M3 数据手册

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VSB1545-M3  
Vishay General Semiconductor  
www.vishay.com  
Photovoltaic Solar Cell Protection Schottky Rectifier  
Ultra Low VF = 0.33 V at IF = 5.0 A  
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• High forward surge capability  
• ESD capability  
P600  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• TJ 200 °C max. in solar bypass mode application  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in solar cell junction box as a bypass diode for  
protection, using DC forward current without reverse bias.  
IF(AV)  
15 A  
45 V  
VRRM  
IFSM  
200 A  
MECHANICAL DATA  
Case: P600  
Molding compound meets UL 94 V-0 flammability rating  
VF at IF = 15 A  
OP max. (AC mode)  
0.44 V  
150 °C  
200 °C  
P600  
T
TJ max. (DC forward current)  
Package  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
Diode variation  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VSB1545  
V1545  
45  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
V
A
(1)  
IF(AV)  
15  
6
Maximum average forward rectified current (fig. 1)  
(2)  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
200  
A
Operating junction temperature range  
Storage temperature range  
TOP  
-40 to +150  
-40 to +175  
°C  
°C  
TSTG  
Junction temperature in DC forward current without  
reverse bias, t 1 hp  
(3)  
TJ  
200  
°C  
Notes  
(1)  
(2)  
(3)  
With heatsink  
Without heatsink, free air  
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test  
Revision: 22-Nov-13  
Document Number: 89390  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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