New Product
VSB2045
Vishay General Semiconductor
Photovoltaic Solar Cell Protection Schottky Rectifier
Ultra Low VF = 0.30 V at IF = 5.0 A
FEATURES
• Trench MOS Schottky technology
TMBS®
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
P600
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
45 V
VRRM
MECHANICAL DATA
Case: P600
Molding compound meets UL 94 V-0 flammability rating
IFSM
250 A
0.42 V
150 °C
VF at IF = 20 A
TOP max.
Base P/N-M3
- halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB2045
V2045
45
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF(AV)
20
Maximum average forward rectified current (fig. 1)
(2)
IF(AV)
6.5
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
250
A
Operating junction temperature range
Storage temperature range
TOP
- 40 to + 150
- 40 to + 175
°C
°C
TSTG
Junction temperature in DC forward current
without reverse bias, t ≤ 1 h (fig. 2)
(3)
TJ
≤ 200
°C
Notes
(1)
(2)
(3)
With heatsink
Without heatsink, free air
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Document Number: 89391
Revision: 05-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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