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VS-MURB820TRLPBF

更新时间： 2024-11-23 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 快速恢复大电源超快恢复二极管快速恢复二极管超快恢复大功率电源高功率电源
页数 文件大小 规格书
9页 267K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3

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VS-MURB820TRLPBF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：TO-263
包装说明：HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.49
Is Samacsys：N其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用：ULTRA FAST RECOVERY HIGH POWER外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.895 V
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：100 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：200 V
最大反向恢复时间：0.035 µs子类别：Rectifier Diodes
表面贴装：YES端子面层：MATTE TIN (SN) - WITH NICKEL (NI) BARRIER
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

VS-MURB820TRLPBF 数据手册

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VS-MURB820PbF, VS-MURB820-1PbF  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Rectifier, 8 A FRED Pt®  
FEATURES  
• Ultrafast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
TO-263AB (D2PAK)  
TO-262AA  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Base  
cathode  
• AEC-Q101 qualified  
2
2
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
DESCRIPTION / APPLICATIONS  
3
1
3
1
N/C  
Anode  
N/C  
Anode  
MUR.. series are the state of the art ultrafast recovery  
rectifiers specifically designed with optimized performance  
of forward voltage drop and ultrafast recovery time.  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
VS-MURB820-1PbF  
VS-MURB820PbF  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
IF(AV)  
8 A  
200 V  
VR  
VF at IF  
trr  
0.895 V  
35 ns  
TJ max.  
Diode variation  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
200  
V
Total device, rated VR, TC = 150 °C  
Rated VR, square wave, 20 kHz, TC = 150 °C  
8
100  
IFSM  
A
IFM  
16  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
200  
-
-
V
-
-
-
-
-
-
-
-
0.975  
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
0.895  
VR = VR rated  
-
5
250  
-
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
Junction capacitance  
Series inductance  
CT  
LS  
25  
8.0  
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 10-Jul-15  
Document Number: 94081  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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