生命周期: | Active | Reach Compliance Code: | unknown |
HTS代码: | 8541.40.20.00 | 风险等级: | 1.44 |
其他特性: | HIGH RELIABILITY | 配置: | SINGLE |
最大正向电流: | 0.1 A | 最大正向电压: | 1.9 V |
安装特点: | SURFACE MOUNT | 功能数量: | 1 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
光电设备类型: | INFRARED LED | 标称输出功率: | 55 mW |
峰值波长: | 850 nm | 最大反向电压: | 5 V |
半导体材料: | GaAlAs | 形状: | ROUND |
尺寸: | 1.8 mm | 光谱带宽: | 3e-8 m |
子类别: | Infrared LEDs | 表面贴装: | YES |
视角: | 20 deg | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VSMY2850GX01 | VISHAY |
获取价格 |
Infrared LED, | |
VSMY2850RG | VISHAY |
获取价格 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology | |
VSMY2850RG_11 | VISHAY |
获取价格 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology | |
VSMY2850RGX01 | VISHAY |
获取价格 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology | |
VSMY2853G | VISHAY |
获取价格 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology | |
VSMY2853RG | VISHAY |
获取价格 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology | |
VSMY2853RGX01 | VISHAY |
获取价格 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology | |
VSMY2853SL | VISHAY |
获取价格 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology | |
VSMY2853SLX01 | VISHAY |
获取价格 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology | |
VSMY2890RGX01 | VISHAY |
获取价格 |
Infrared LED, |