Datasheet > VSMY3850_11

VSMY3850_11

更新时间： 2024-02-18 16:43:12

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	132K
描述
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology

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VSMY3850_11 数据手册

VSMY3850

Vishay Semiconductors

www.vishay.com

High Speed Infrared Emitting Diode, 850 nm,

Surface Emitter Technology

FEATURES

• Package type: surface mount

• Package form: PLCC-2

• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75

• Peak wavelength: _p= 850 nm

• High reliability

• High radiant power

• High radiant intensity

94 8553

• Angle of half intensity:  = ꢀ0ꢁ

• Designed for high pulse current operation

• Floor life: 1ꢀ8 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/9ꢀ/EC

DESCRIPTION

Note

VSMY3850 is an infrared, 850 nm emitting diode based on

surface emitter technology with high radiant intensity, high

optical power and high speed, molded in a PLCC-2 package

for surface mounting (SMD).

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

RELEASED FOR APPLICATIONS

• IR remote control

• 3D TV

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

 (deg)



_P(nm)

t_r(ns)

VSMY3850

ꢀ0

850

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

VSMY3850-GS08

VSMY3850-GS18

PACKAGING

REMARKS

PACKAGE FORM

PLCC-2

Tape and reel

MOQ: 7500 pcs, 1500 pcs/reel

MOQ: 8000 pcs, 8000 pcs/reel

PLCC-2

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 ꢁC, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

not designed for DC

operation

Forward current

I_F

Pulse peak forward current

Surge forward current

t_p/T = 0.1, t_p 100 μs

I_FM

I_FSM

P_V

800

t_p= 100 μs

200

Power dissipation

ꢁC

Junction temperature

T_j

100

Operating temperature range

Storage temperature range

Soldering temperature

T_amb

T_stg

T_sd

- 40 to + 85

- 40 to + 100

2ꢀ0

ꢁC

acc. figure 7, J-STD-020

ꢁC

Thermal resistance junction/ambient

J-STD-051, soldered on PCB

R_thJA

250

K/W

Rev. 1.1, 31-May-11

Document Number: 83399

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与VSMY3850_11相关器件

型号	品牌	获取价格	描述	数据表
VSMY3850_1109	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY385010	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY385010-GS08	VISHAY	获取价格	Infrared LED,
VSMY385010-GS18	VISHAY	获取价格	Infrared LED,
VSMY385010X01	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY385010X01-GS08	VISHAY	获取价格	Infrared LED,
VSMY385010X01-GS18	VISHAY	获取价格	Infrared LED,
VSMY3850-GS08	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY3850-GS18	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY3850X01	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology

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