Datasheet > VSMY385010

VSMY385010

更新时间： 2023-12-06 20:09:29

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	140K
描述
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology

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VSMY385010 数据手册

VSMY385010

Vishay Semiconductors

www.vishay.com

High Speed Infrared Emitting Diode, 850 nm,

Surface Emitter Technology

FEATURES

• Package type: surface mount

• Package form: PLCC-2

• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75

• Peak wavelength: _p= 850 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:  = 60°

948553

• Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

As part of the SurfLight^TMportfolio, the VSMY385010 is an

infrared, 850 nm emitting diode based on surface emitter

technology with high radiant intensity, high optical power

and high speed, molded in a PLCC-2 package for surface

mounting (SMD).

RELEASED FOR APPLICATIONS

Infrared radiation source for operation with CMOS cameras

(illumination)

• High speed IR data transmission

• IR touch panels

• 3D gaming

• Light curtain

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

 (deg)

_p(nm)

t_r(ns)

VSMY385010

850

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

VSMY385010-GS08

VSMY385010-GS18

PACKAGING

REMARKS

PACKAGE FORM

PLCC-2

Tape and reel

MOQ: 7500 pcs, 1500 pcs/reel

MOQ: 8000 pcs, 8000 pcs/reel

PLCC-2

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

Forward current

I_F

Pulse peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p 100 μs

I_FM

140

t_p= 100 μs

I_FSM

P_V

140

°C

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

Thermal resistance junction/ambient

T_j

100

T_amb

T_stg

T_sd

-40 to +85

260

°C

acc. figure 7, J-STD-020

°C

J-STD-051, soldered on PCB

R_thJA

250

K/W

Rev. 1.0, 27-May-15

Document Number: 84294

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VSMY385010相关器件

型号	品牌	获取价格	描述	数据表
VSMY385010-GS08	VISHAY	获取价格	Infrared LED,
VSMY385010-GS18	VISHAY	获取价格	Infrared LED,
VSMY385010X01	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY385010X01-GS08	VISHAY	获取价格	Infrared LED,
VSMY385010X01-GS18	VISHAY	获取价格	Infrared LED,
VSMY3850-GS08	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY3850-GS18	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY3850X01	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY3890X01	VISHAY	获取价格	High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology
VSMY3940X01	VISHAY	获取价格	High Speed Infrared Emitting Diode, 940 nm,Surface Emitter Technology

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