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VS-MURD620CTHM3

更新时间： 2024-11-24 01:10:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 122K
描述
Low leakage current

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VS-MURD620CTHM3 数据手册

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VS-MURD620CTHM3  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Rectifier, 2 x 3 A FRED Pt®  
FEATURES  
Base  
common  
cathode  
• Ultrafast recovery time  
4
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• AEC-Q101 qualified  
2
Common  
cathode  
• Meets JESD 201 class 2 whisker test  
TO-252AA (D-PAK)  
1
3
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
Anode  
Anode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
DESCRIPTION / APPLICATIONS  
Package  
TO-252AA (D-PAK)  
2 x 3 A  
VS-MURD620CTHM3 is the state of the art ultrafast  
recovery rectifier specifically designed with optimized  
performance of forward voltage drop and ultrafast recovery  
time.  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
IF(AV)  
VR  
200 V  
VF at IF  
0.96 V  
t
rr typ.  
See Recovery table  
175 °C  
TJ max.  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Diode variation  
Common cathode  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
200  
V
Average rectified forward current per device  
Non-repetitive peak surge current  
Peak repetitive forward current per diode  
Operating junction and storage temperatures  
Total device, rated VR, TC = 146 °C  
Rated VR, square wave, 20 kHz, TC = 146 °C  
6
IFSM  
50  
6
A
IFM  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 3 A  
200  
-
-
-
-
-
-
-
-
-
-
-
-
1.0  
0.96  
1.2  
1.13  
5
V
IF = 3 A, TJ = 125 °C  
IF = 6 A  
Forward voltage  
VF  
-
IF = 6 A, TJ = 125 °C  
VR = VR rated  
-
-
Reverse leakage current  
IR  
μA  
TJ = 125 °C, VR = VR rated  
VR = 200 V  
-
250  
-
Junction capacitance  
Series inductance  
CT  
LS  
12  
8.0  
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 10-Jul-15  
Document Number: 94742  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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