VS-MURD620CTHM3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt®
FEATURES
Base
common
cathode
• Ultrafast recovery time
4
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• AEC-Q101 qualified
2
Common
cathode
• Meets JESD 201 class 2 whisker test
TO-252AA (D-PAK)
1
3
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Anode
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
DESCRIPTION / APPLICATIONS
Package
TO-252AA (D-PAK)
2 x 3 A
VS-MURD620CTHM3 is the state of the art ultrafast
recovery rectifier specifically designed with optimized
performance of forward voltage drop and ultrafast recovery
time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
IF(AV)
VR
200 V
VF at IF
0.96 V
t
rr typ.
See Recovery table
175 °C
TJ max.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Diode variation
Common cathode
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
IF(AV)
TEST CONDITIONS
MAX.
UNITS
Peak repetitive reverse voltage
200
V
Average rectified forward current per device
Non-repetitive peak surge current
Peak repetitive forward current per diode
Operating junction and storage temperatures
Total device, rated VR, TC = 146 °C
Rated VR, square wave, 20 kHz, TC = 146 °C
6
IFSM
50
6
A
IFM
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 3 A
200
-
-
-
-
-
-
-
-
-
-
-
-
1.0
0.96
1.2
1.13
5
V
IF = 3 A, TJ = 125 °C
IF = 6 A
Forward voltage
VF
-
IF = 6 A, TJ = 125 °C
VR = VR rated
-
-
Reverse leakage current
IR
μA
TJ = 125 °C, VR = VR rated
VR = 200 V
-
250
-
Junction capacitance
Series inductance
CT
LS
12
8.0
pF
nH
Measured lead to lead 5 mm from package body
-
Revision: 10-Jul-15
Document Number: 94742
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000