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VS-MURB2020CTPBF PDF预览

VS-MURB2020CTPBF

更新时间: 2024-11-23 13:01:11
品牌 Logo 应用领域
威世 - VISHAY 整流二极管超快恢复大功率电源高功率电源快速恢复大电源超快恢复二极管快速恢复二极管
页数 文件大小 规格书
9页 173K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3

VS-MURB2020CTPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:8.58
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:ULTRA FAST RECOVERY HIGH POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-MURB2020CTPBF 数据手册

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VS-MURB2020CTPbF, VS-MURB2020CT-1PbF  
Vishay High Power Products  
Ultrafast Rectifier, 2 x 10 A FRED Pt®  
FEATURES  
• Ultrafast recovery time  
VS-MURB2020CT-1PbF  
VS-MURB2020CTPbF  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Base  
common  
cathode  
2
Base  
common  
cathode  
2
• Halogen-free according to IEC 61249-2-21  
definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
3
3
2
2
1
1
Anode  
1
Anode  
1
Anode  
2
Anode  
2
DESCRIPTION/APPLICATIONS  
Common  
cathode  
Common  
cathode  
MUR.. series are the state of the art ultrafast recovery  
rectifiers specifically designed with optimized performance  
of forward voltage drop and ultrafast recovery time.  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
D2PAK  
TO-262  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
trr  
IF(AV)  
VR  
25 ns  
2 x 10 A  
200 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
200  
UNITS  
Peak repetitive reverse voltage  
VRRM  
V
per leg  
total device  
10  
Average rectified forward current  
IF(AV)  
Rated VR, TC = 145 °C  
20  
A
Non-repetitive peak surge current per leg  
Peak repetitive forward current per leg  
Operating junction and storage temperatures  
IFSM  
IFM  
100  
Rated VR, square wave, 20 kHz, TC = 145 °C  
20  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
200  
-
-
IF = 8 A, TJ = 125 °C  
IF = 16 A  
-
-
-
-
-
-
-
-
-
0.85  
1.15  
1.05  
15  
V
Forward voltage  
VF  
IF = 16 A, TJ = 125 °C  
VR = VR rated  
-
-
Reverse leakage current  
IR  
μA  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
250  
-
Junction capacitance  
Series inductance  
CT  
LS  
55  
8.0  
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 94083  
Revision: 08-Apr-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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