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VS-MBRB2535CTTRRP

更新时间： 2024-09-25 15:57:47
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
8页 266K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, PLASTIC, D2PAK-3

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VS-MBRB2535CTTRRP 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-263包装说明：R-PSSO-G2
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.51其他特性：FREEWHEELING DIODE, HIGH RELIABILITY
应用：HIGH POWER外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.73 V
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：1060 A
元件数量：2相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：15 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：35 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：10Base Number Matches：1

VS-MBRB2535CTTRRP 数据手册

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VS-MBRB25..CTPbF, VS-MBR25..CT-1PbF Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 15 A  
TO-263AB (D2PAK)  
FEATURES  
TO-262AA  
• 150 °C TJ operation  
• Center tap D2PAK and TO-262 packages  
• Low forward voltage drop  
• High frequency operation  
Base  
common  
cathode  
Base  
common  
cathode  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
• AEC-Q101 qualified  
Anode  
Anode  
Anode  
Anode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VS-MBR25..CT-1PbF  
VS-MBRB25..CTPbF  
PRODUCT SUMMARY  
DESCRIPTION  
Package  
TO-263AB (D2PAK), TO-262AA  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
IF(AV)  
30 A  
35 V, 45 V  
0.73 V  
VR  
VF at IF  
IRM max.  
TJ max.  
Diode variation  
EAS  
40 mA at 125 °C  
150 °C  
Common cathode  
16 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform (per device)  
TC = 130 °C (per leg)  
A
30  
VRRM  
IFSM  
35, 45  
1060  
V
A
tp = 5 μs sine  
30 Apk, TJ = 125 °C  
Range  
VF  
0.73  
V
TJ  
-65 to +150  
°C  
VOLTAGE RATINGS  
VS-MBRB2535CTPbF  
SYMBOL  
VS-MBRB2545CTPbF  
VS-MBR2545CT-1PbF  
PARAMETER  
UNITS  
VS-MBR2535CT-1PbF  
Maximum DC reverse voltage  
VR  
35  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
IF(AV)  
IFRM  
TEST CONDITIONS  
TC = 130 °C, rated VR  
VALUES  
UNITS  
per leg  
15  
30  
30  
Maximum average  
forward current  
per device  
Peak repetitive forward current per leg  
Rated VR, square wave, 20 kHz, TC = 130 °C  
Following any rated load  
5 μs sine or 3 μs   
A
condition and with rated  
rect. pulse  
1060  
VRRM applied  
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions half wave,   
150  
16  
2
single phase, 60 Hz  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 8 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Revision: 18-Oct-16  
Document Number: 94308  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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