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VS-MBRB2080CTTRLP PDF预览

VS-MBRB2080CTTRLP

更新时间: 2024-11-21 15:57:47
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
8页 173K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, PLASTIC, D2PAK-3

VS-MBRB2080CTTRLP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:PLASTIC, D2PAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.43其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
应用:HIGH POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.7 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:850 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:80 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-MBRB2080CTTRLP 数据手册

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VS-MBRB20...CTPbF, VS-MBR20...CT-1PbF Series  
Vishay High Power Products  
Schottky Rectifier, 2 x 10 A  
FEATURES  
• 150 °C TJ operation  
VS-MBR20 ...CT-1PbF  
VS-MBRB20...CTPbF  
• Low forward voltage drop  
• High frequency operation  
• Center tap D2PAK and TO-262 packages  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long  
term reliability  
Base  
common  
cathode  
Base  
common  
cathode  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
2
2
• Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
D2PAK  
TO-262  
DESCRIPTION  
This center tap Schottky rectifier has been optimized for  
low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 10 A  
VR  
80 V to 100 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
CHARACTERISTICS  
Rectangular waveform (per device)  
TC = 133 °C (per leg)  
VALUES  
20  
UNITS  
A
20  
VRRM  
IFSM  
80 to 100  
850  
V
A
tp = 5 μs sine  
10 Apk, TJ = 125 °C  
Range  
VF  
0.70  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
VS-MBRB2080CTPbF VS-MBRB2090CTPbF VS-MBRB20100CTPbF  
VS-MBR2080CT-1PbF VS-MBR2090CT-1PbF VS-MBR20100CT-1PbF  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
80  
90  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
per leg  
10  
20  
20  
Maximum average  
forward current  
IF(AV)  
IFRM  
TC = 133 °C, rated VR  
per device  
Peak repetitive forward current per leg  
Rated VR, square wave, 20 kHz, TC = 133 °C  
5 μs sine or  
3 μs rect. pulse  
Following any rated load ondition  
and with rated VRRM applied  
A
850  
150  
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions halfwave,  
single phase, 60 Hz  
Peak repetitive reverse surge current  
Non-repetitive avalanche energy per leg  
IRRM  
EAS  
2.0 μs, 1.0 kHz  
0.5  
24  
TJ = 25 °C, IAS = 2 A, L = 12 mH  
mJ  
Document Number: 94306  
Revision: 16-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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