Datasheet > VS-GT300YH120N

VS-GT300YH120N

更新时间： 2023-12-06 20:03:54

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
10页	191K
描述
DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

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VS-GT300YH120N 数据手册

VS-GT300YH120N

Vishay Semiconductors

www.vishay.com

10 000

1000

100

_CC= 600 V

_g= 4.7 Ω

t_d(off)

V_GE= 15 V

E_on

E_off

t_d(on)

L = 500 μH

t_r

t_f

100

150

200

250

300

350

Ic (A)

R_g(Ω)

Fig. 13 - Typical IGBT Energy Loss vs. I_C, T_J= 125 °C -

Freewheeling Diode VS-H3195D12A6B in TO-247 Package

Fig. 16 - Typical IGBT Switching Time vs. R_g,

T_J= 125 °C, I_C= 100 A, V_CE= 360 V, V_GE= 15 V, L = 500 μH

500

140

_CC= 600 V

I_C= 300 A

V_GE= 15 V

L = 500 μH

450

120

100

10 A, T_J= 25 °C

400

350

300

250

200

150

10 A, T_J= 125 °C

40 A, T_J= 25 °C

40 A, T_J= 125 °C

E_on

E_off

100

200

300

400

500

R_g(Ω)

di_F/dt (A/μs)

Fig. 14 - Typical IGBT Energy Loss vs. R_g, T_J= 125 °C -

Freewheeling Diode VS-H3195D12A6B in TO-247 Package

Fig. 17 - Typical t_rrAntiparallel Diode vs. di_F/dt, V_rr= 400 V

10 000

V_CC= 600 V

R_g= 4.7 Ω

V_GE= 15 V

L = 500 μH

40 A, T_J= 125 °C

t_d(off)

t_d(on)

10 A, T_J= 125 °C

1000

t_r

100

t_f

10 A, T_J= 25 °C

40 A, T_J= 25 °C

100

200

300

400

500

100 150 200 250 300 350

(A)

di_F/dt (A/μs)

Fig. 18 - Typical I_rrAntiparallel Diode vs. di_F/dt, V_rr= 400 V

Fig. 15 - Typical IGBT Switching Time vs. I_C, T_J= 125 °C -

Freewheeling Diode VS-H3195D12A6B in TO-247 Package

Revision: 20-Mar-2019

Document Number: 94681

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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