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VS-6TQ040STRR-M3

更新时间： 2024-10-01 01:12:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 185K
描述
High Performance Schottky Rectifier, 6 A

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VS-6TQ35S-M3, VS-6TQ40S-M3,VS-6TQ45S-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 6 A  
FEATURES  
Base  
cathode  
• 175 °C TJ operation  
2
• High frequency operation  
• Low forward voltage drop  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
D2PAK  
3
1
N/C  
Anode  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• Designed and qualified according to JEDEC®-JESD 47  
PRODUCT SUMMARY  
IF(AV)  
6 A  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
VR  
35 V, 40 V, 45 V  
0.53 V  
VF at IF  
IRM  
7 mA at 125 °C  
175 °C  
DESCRIPTION  
The VS-6TQ... Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
EAS  
8 mJ  
Package  
Diode variation  
TO-263AB (D2PAK)  
Single die  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
6
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
Range  
A
V
35 to 45  
690  
tp = 5 μs sine  
6 Apk, TJ = 125 °C  
Range  
A
0.53  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-6TQ035S-M3  
35  
VS-6TQ040S-M3  
VS-6TQ045S-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
40  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 164 °C, rectangular waveform  
6
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
5 μs sine or 3 μs rect. pulse  
Following any rated load  
690  
A
IFSM  
condition and with rated  
10 ms sine or 6 ms rect. pulse  
140  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH  
8
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.20  
Revision: 28-Feb-14  
Document Number: 94945  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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