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VS-6TQ045PBF

更新时间: 2024-11-02 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 170K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

VS-6TQ045PBF 技术参数

生命周期:Lifetime Buy包装说明:R-PSFM-T2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:7.68其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.73 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:690 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE最大重复峰值反向电压:45 V
最大反向电流:800 µA表面贴装:NO
技术:SCHOTTKY端子面层:MATTE TIN OVER NICKEL
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

VS-6TQ045PBF 数据手册

 浏览型号VS-6TQ045PBF的Datasheet PDF文件第2页浏览型号VS-6TQ045PBF的Datasheet PDF文件第3页浏览型号VS-6TQ045PBF的Datasheet PDF文件第4页浏览型号VS-6TQ045PBF的Datasheet PDF文件第5页浏览型号VS-6TQ045PBF的Datasheet PDF文件第6页浏览型号VS-6TQ045PBF的Datasheet PDF文件第7页 
VS-6TQ...PbF Series, VS-6TQ...-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 6 A  
FEATURES  
Base  
cathode  
• 175 °C TJ operation  
2
• High frequency operation  
• Low forward voltage drop  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
3
Cathode Anode  
TO-220AC  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AC  
6 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
35 V, 40 V, 45 V  
0.53 V  
DESCRIPTION  
VF at IF  
The VS-6TQ... Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
I
RM max.  
7 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
8 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
6
UNITS  
Rectangular waveform  
A
V
Range  
35 to 45  
690  
tp = 5 μs sine  
6 Apk, TJ = 125 °C  
Range  
A
VF  
0.53  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
VS-  
6TQ035PbF  
VS-  
6TQ035-N3  
VS-  
6TQ040PbF  
VS-  
6TQ040-N3  
VS-  
6TQ045PbF  
VS-  
6TQ045-N3  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC  
reverse voltage  
VR  
35  
35  
40  
40  
45  
45  
V
Maximum working  
peak reverse  
voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 164 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
6
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
690  
Following any rated load  
condition and with rated  
VRRM applied  
IFSM  
A
140  
8
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.20  
Revision: 29-Aug-11  
Document Number: 94252  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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