Datasheet > VS-6TQ35S-M3

VS-6TQ35S-M3

更新时间： 2024-11-27 01:12:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	185K
描述
High Performance Schottky Rectifier, 6 A

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中文翻译

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数据手册

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VS-6TQ35S-M3 数据手册

VS-6TQ35S-M3, VS-6TQ40S-M3,VS-6TQ45S-M3

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 6 A

FEATURES

Base

cathode

• 175 °C T_Joperation

• High frequency operation

• Low forward voltage drop

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

D²PAK

N/C

Anode

• Guard ring for enhanced ruggedness and long

term reliability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Designed and qualified according to JEDEC^®-JESD 47

PRODUCT SUMMARY

I_F(AV)

6 A

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

V_R

35 V, 40 V, 45 V

0.53 V

V_Fat I_F

I_RM

7 mA at 125 °C

175 °C

DESCRIPTION

The VS-6TQ... Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

T_Jmax.

E_AS

8 mJ

Package

Diode variation

TO-263AB (D²PAK)

Single die

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FSM

V_F

Rectangular waveform

Range

35 to 45

690

t_p= 5 μs sine

6 A_pk, T_J= 125 °C

Range

0.53

T_J

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-6TQ035S-M3

VS-6TQ040S-M3

VS-6TQ045S-M3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 5



I_F(AV)

50 % duty cycle at T_C= 164 °C, rectangular waveform

Maximum peak one cycle

non-repetitive surge current

See fig. 7

5 μs sine or 3 μs rect. pulse

Following any rated load

690



I_FSM

condition and with rated

10 ms sine or 6 ms rect. pulse

140

V_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1.20 A, L = 11.10 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

1.20

Revision: 28-Feb-14

Document Number: 94945

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

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