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VS-6TQ045STRRPBF PDF预览

VS-6TQ045STRRPBF

更新时间: 2024-11-23 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 160K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 6A, 45V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3

VS-6TQ045STRRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.34其他特性:FREEWHEELING DIODE, HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.53 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:690 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:45 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-6TQ045STRRPBF 数据手册

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VS-6TQ035SPbF, VS-6TQ040SPbF, VS-6TQ045SPbF  
Vishay High Power Products  
Schottky Rectifier, 6 A  
FEATURES  
• 175 °C TJ operation  
• High frequency operation  
• Low forward voltage drop  
Base  
cathode  
2
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
3
1
D2PAK  
N/C  
Anode  
• Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
PRODUCT SUMMARY  
DESCRIPTION  
The VS-6TQ... Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
IF(AV)  
6 A  
35 V to 45 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
Rectangular waveform  
Range  
VALUES  
6
UNITS  
A
V
35 to 45  
690  
tp = 5 μs sine  
A
VF  
6 Apk, TJ = 125 °C  
Range  
0.53  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-6TQ035SPbF  
35  
VS-6TQ040SPbF  
VS-6TQ045SPbF  
UNITS  
Maximum DC reverse voltage  
VR  
40  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 164 °C, rectangular waveform  
VALUES UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
6
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
690  
IFSM  
140  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH  
8
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.20  
Document Number: 94253  
Revision: 15-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

VS-6TQ045STRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
VS-6TQ045STRLPBF VISHAY

类似代替

Rectifier Diode, Schottky, 1 Phase, 1 Element, 6A, 45V V(RRM), Silicon, HALOGEN FREE AND R

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