Datasheet > VS-6DKH02-M3

VS-6DKH02-M3

更新时间： 2024-11-12 14:55:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	219K
描述
Hyperfast Rectifier, 2 x 3 A FRED Pt?

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VS-6DKH02-M3 数据手册

VS-6DKH02-M3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 2 x 3 A FRED Pt^®

FEATURES

• Hyper fast recovery time, reduced Q_rr, and soft

recovery

• 175 °C maximum operating junction temperature

• Low forward voltage drop

• Low leakage current

• Specific for output and snubber operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

FlatPAK 5 x 6

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

1, 2

3, 4

7, 8

5, 6

DESCRIPTION / APPLICATIONS

State of the art hyper fast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and hyper fast recovery time.

LINKS TO ADDITIONAL RESOURCES

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

3D Models

These devices are intended for use in snubber, boost,

lighting, as high frequency rectifiers and freewheeling

diodes.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 3 A

200 V

0.71 V

25 ns

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element.

V_R

V_Fat I_F

t_rr

MECHANICAL DATA

T_Jmax.

175 °C

Case: FlatPAK 5 x 6

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS-compliant

Package

FlatPAK 5 x 6

Separated cathode

Circuit configuration

Terminals: matte tin plated leads, solderable per

J-STD-002, meets JESD 201 class 2 whisker test

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

V_RRM

200

T_Solderpad= 170 °C, DC

Average rectified forward current per device

I_F(AV)

I_FSM

T_Solderpad= 169 °C, D = 0.5

T_J= 25 °C, 10 ms sinusoidal pulse

per device

Non-repetitive peak surge current

per diode

147

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 100 μA

200

0.94

0.74

I_F= 3 A

0.88

0.71

Forward voltage

V_F

I_F= 3 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 200 V

C_T

Revision: 19-Mar-2021

Document Number: 96082

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-6DKH02-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-6DKH02-M3/H	VISHAY	获取价格	RECT 6A 0.71V FRED PT FLATPAK 5X
VS-6ESH01HM3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6ESH01-M3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6ESH02HM3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6ESH02-M3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6ESH06HM3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6ESH06-M3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6ESH06-M3/86A	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-277A,
VS-6ESU06HM3	VISHAY	获取价格	Ultrafast Rectifier, 6 A FRED Pt?
VS-6ESU06-M3	VISHAY	获取价格	Ultrafast Rectifier, 6 A FRED Pt?

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