Datasheet > VS-6EVH06-M3

VS-6EVH06-M3

更新时间： 2024-11-12 14:55:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	178K
描述
Hyperfast Rectifier, 6 A FRED Pt?

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VS-6EVH06-M3 数据手册

VS-6EVH06-M3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 6 A FRED Pt^®

FEATURES

eSMP^®Series

Heatsink

• Hyperfast recovery time, reduced Q_rrand soft

recovery

• For PFC CRM / CCM operation

• Low forward voltage drop, low power losses

• Low leakage current

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Pin 1

Pin 2

• Meets JESD 201 class 2 whisker test

SlimDPAK (TO-252AE)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

3D Models

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS inverters, or as freewheeling

diodes. Their extremely optimized stored charge and low

recovery current minimize the switching losses and reduce

over dissipation in the switching element and snubbers.

PRIMARY CHARACTERISTICS

I_F(AV)

6 A

V_R

600 V

1.26 V

16 ns

175 °C

MECHANICAL DATA

V_Fat I_F

t_rr(typ.)

T_Jmax.

Case: SlimDPAK (TO-252AE)

Molding compound meets UL 94 V-0 flammability rating

Base PN/-M3 - halogen-free, RoHS-compliant

Package

SlimDPAK (TO-252AE)

Single

Circuit configuration

Terminals: matte tin plated leads, solderable per

J-STD-002

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

600

I_F(AV)

T_C= 148 °C

T_J= 25 °C, 10 ms sine pulse wave

I_FSM

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 100 μA

600

1.6

1.26

2.10

1.70

I_F= 6 A

Forward voltage

V_F

I_F= 6 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

250

C_T

Revision: 18-Feb-2022

Document Number: 96142

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-6EVH06-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-6EVL06HM3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 6 A FRED Pt?
VS-6EVL06-M3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 6 A FRED Pt?
VS-6EVX06HM3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6EVX06-M3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6EWH06FNHM3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252AA, DPAK-3/2
VS-6EWH06FN-M3	VISHAY	获取价格	DIODE 6 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-6EWH06FNTRHM3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 6 A FRED Pt
VS-6EWH06FNTRLHM3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252AA, DPAK-3/2
VS-6EWH06FNTRL-M3	VISHAY	获取价格	DIODE 6 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-6EWH06FNTR-M3	VISHAY	获取价格	DIODE 6 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA

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