Datasheet > VS-6ESH02HM3

VS-6ESH02HM3

更新时间： 2023-12-06 20:03:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	142K
描述
Hyperfast Rectifier, 6 A FRED Pt?

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VS-6ESH02HM3 数据手册

VS-6ESH02HM3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 6 A FRED Pt^®

FEATURES

• Hyperfast recovery time, reduced Q_rr, and

soft recovery

eSMP Series

• 175 °C maximum operating junction

temperature

Anode 1

Anode 2

Cathode

• Specified for output and snubber operation

• Low forward voltage drop

• Low leakage current

SMPC (TO-277A)

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified, meets JESD 201 class 2 whisker test

LINKS TO ADDITIONAL RESOURCES

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3D Models

DESCRIPTION / APPLICATIONS

State of the art hyperfast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and hyperfast recovery time.

PRIMARY CHARACTERISTICS

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness, and

reliability characteristics.

I_F(AV)

6 A

V_R

200 V

0.74 V

28 ns

175 °C

V_Fat I_F

t_{rr (typ.)}

T_Jmax.

These devices are intended for use in snubber, boost,

lighting, piezo-injection, as high frequency rectifiers and

freewheeling diodes.

Package

SMPC (TO-277A)

Single

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element.

Circuit configuration

MECHANICAL DATA

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS compliant

Terminals: matte tin plated leads, solderable per

J-STD-002

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

200

I_F(AV)

T_Sp= 160 °C

T_J= 25 °C

I_FSM

150

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 100 μA

200

0.87

0.74

0.94

0.8

I_F= 6 A

Forward voltage

V_F

I_F= 6 A, T_J= 125 °C

V_R= V_Rrated

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 125 °C, V_R= V_Rrated

V_R= 200 V

C_T

Revision: 21-Jan-2021

Document Number: 94983

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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