Datasheet > VS-6ESH02-M3

VS-6ESH02-M3

更新时间： 2024-11-12 14:55:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	138K
描述
Hyperfast Rectifier, 6 A FRED Pt?

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-6ESH02-M3 数据手册

VS-6ESH02-M3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 6 A FRED Pt^®

FEATURES

• Hyperfast recovery time, reduced Q_rr, and soft

recovery

eSMP Series

• 175 °C maximum operating junction temperature

• Specified for output and snubber operation

• Low forward voltage drop

Anode 1

Anode 2

Cathode

• Low leakage current

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMPC (TO-277A)

• Meets JESD 201 class 2 whisker test

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

DESCRIPTION / APPLICATIONS

3D Models

State of the art hyperfast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and hyperfast recovery time.

PRIMARY CHARACTERISTICS

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness, and

reliability characteristics.

I_F(AV)

6 A

V_R

200 V

0.74 V

28 ns

175 °C

V_Fat I_F

t_{rr (typ.)}

T_Jmax.

These devices are intended for use in snubber, boost,

lighting, as high frequency rectifiers and freewheeling

diodes.

Package

SMPC (TO-277A)

Single

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element.

Circuit configuration

MECHANICAL DATA

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS compliant

Terminals: matte tin plated leads, solderable per

J-STD-002

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

200

I_F(AV)

T_Sp= 160 °C

T_J= 25 °C

I_FSM

150

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 100 μA

200

0.87

0.74

0.94

0.8

I_F= 6 A

Forward voltage

V_F

I_F= 6 A, T_J= 125 °C

V_R= V_Rrated

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 125 °C, V_R= V_Rrated

V_R= 200 V

C_T

Revision: 21-Jan-2021

Document Number: 94982

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与VS-6ESH02-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-6ESH06HM3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6ESH06-M3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6ESH06-M3/86A	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-277A,
VS-6ESU06HM3	VISHAY	获取价格	Ultrafast Rectifier, 6 A FRED Pt?
VS-6ESU06-M3	VISHAY	获取价格	Ultrafast Rectifier, 6 A FRED Pt?
VS-6EVH06HM3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6EVH06-M3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?
VS-6EVL06HM3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 6 A FRED Pt?
VS-6EVL06-M3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 6 A FRED Pt?
VS-6EVX06HM3	VISHAY	获取价格	Hyperfast Rectifier, 6 A FRED Pt?

与VS-6ESH02-M3相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-6ESH02-M3

VS-6ESH02-M3 数据手册

与VS-6ESH02-M3相关器件

与VS-6ESH02-M3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-6ESH02-M3

VS-6ESH02-M3 数据手册

与VS-6ESH02-M3相关器件

与VS-6ESH02-M3相关文章

您还可以找

您在本页遇到什么问题？