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VS-42CTQ020-1PBF

更新时间： 2024-09-16 21:09:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 157K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20V V(RRM), Silicon, TO-262AA,

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VS-42CTQ020-1PBF 技术参数

生命周期：ActiveReach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.7
应用：GENERAL PURPOSE外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.51 V
JEDEC-95代码：TO-262AAJESD-30 代码：R-PSIP-T3
最大非重复峰值正向电流：250 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE参考标准：AEC-Q101
最大重复峰值反向电压：20 V最大反向电流：3000 µA
表面贴装：NO技术：SCHOTTKY
端子形式：THROUGH-HOLE端子位置：SINGLE
Base Number Matches：1

VS-42CTQ020-1PBF 数据手册

 浏览型号VS-42CTQ020-1PBF的Datasheet PDF文件第2页浏览型号VS-42CTQ020-1PBF的Datasheet PDF文件第3页浏览型号VS-42CTQ020-1PBF的Datasheet PDF文件第4页浏览型号VS-42CTQ020-1PBF的Datasheet PDF文件第5页浏览型号VS-42CTQ020-1PBF的Datasheet PDF文件第6页浏览型号VS-42CTQ020-1PBF的Datasheet PDF文件第7页 
VS-47CTQ020SPbF, VS-47CTQ020-1PbF  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 20 A  
TO-263AB (D2PAK)  
TO-262AA  
FEATURES  
• 150 °C TJ operation  
• Center tap configuration  
• Optimized for 3.3 V application  
• Ultralow forward voltage drop  
• High frequency operation  
Base  
common  
cathode  
Base  
common  
cathode  
• Guard ring for enhanced ruggedness and long  
term reliability  
2
2
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
• AEC-Q101 qualified  
VS-47CTQ020-1PbF  
VS-47CTQ020SPbF  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
IF(AV)  
2 x 20 A  
DESCRIPTION  
VR  
20 V  
0.34 V  
This center tap Schottky rectifier module has been  
optimized for ultralow forward voltage drop specifically for  
3.3 V output power supplies. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are parallel  
switching power supplies, converters, reverse battery  
protection, and redundant power subsystems.  
VF at IF  
I
RM max.  
310 mA at 125 °C  
150 °C  
TJ max.  
EAS  
18  
Package  
TO-263AB (D2PAK), TO-262AA  
Diode variation  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
40  
UNITS  
Rectangular waveform  
A
V
20  
tp = 5 μs sine  
1000  
A
VF  
20 Apk, TJ = 125 °C  
0.34  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
VS-47CTQ020SPbF  
VS-47CTQ020-1PbF  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
125 °C  
150 °C  
20  
10  
Maximum DC reverse voltage  
VR  
V
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 135 °C, rectangular waveform  
VALUES  
UNITS  
per leg  
20  
40  
Maximum average  
forward current  
IF(AV)  
per device  
A
Following any rated load  
condition and with rated  
VRRM applied  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 3 mH  
1000  
250  
18  
Maximum peak one cycle  
IFSM  
EAS  
IAR  
non-repetitive surge current per leg  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3
Revision: 15-Aug-15  
Document Number: 94228  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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