Datasheet > VS-40ETS12PBF

VS-40ETS12PBF

更新时间： 2024-09-17 19:46:35

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	165K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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VS-40ETS12PBF 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.75
二极管类型：	RECTIFIER DIODE	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT APPLICABLE	端子面层：	MATTE TIN OVER NICKEL
处于峰值回流温度下的最长时间：	NOT APPLICABLE	Base Number Matches：	1

VS-40ETS12PBF 数据手册

VS-20ETS16PbF, VS-20ETS16-M3

www.vishay.com

Vishay Semiconductors

High Voltage, Input Rectifier Diode, 20 A

FEATURES

Base

cathode

• Very low forward voltage drop

• 150 °C max. operating junction temperature

• Designed and qualified according to

JEDEC-JESD47

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Cathode Anode

TO-220AC

Available

APPLICATIONS

• Input rectification

PRODUCT SUMMARY

Package

TO-220AC

20 A

• Vishay Semiconductors switches and output rectifiers

which are available in identical package outlines

I_F(AV)

V_R

1600 V

1.1 V

DESCRIPTION

V_Fat I_F

I_FSM

High voltage rectifiers optimized for very low forward

voltage drop with moderate leakage.

300 A

T_Jmax.

Diode variation

150 °C

Single die

These devices are intended for use in main rectification

(single or three phase bridge).

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

Capacitive input filter T_A= 55 °C, T_J= 125 °C 

common heatsink of 1 °C/W

16.3

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

1600

300

V_F

10 A, T_J= 25 °C

1.0

T_J

- 40 to 150

°C

VOLTAGE RATINGS

PART NUMBER

V_RRM, MAXIMUM

PEAK REVERSE VOLTAGE

V_RSM, MAXIMUM NON-REPETITIVE

I_RRM

AT 150 °C

PEAK REVERSE VOLTAGE

VS-20ETS16PbF, VS-20ETS16-M3

1600

1700

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

I_F(AV)

T_C= 105 °C, 180° conduction half sine wave

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

t = 0.1 ms to 10 ms, no voltage reapplied

250

Maximum peak one cycle 

non-repetitive surge current

I_FSM

300

316

Maximum I²t for fusing

I²t

A²s

442

Maximum I²t for fusing

I²t

4420

A²s

Revision: 26-Jul-13

Document Number: 93405

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

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与VS-40ETS12PBF相关器件

型号	品牌	获取价格	描述	数据表
VS-40HF10	VISHAY	获取价格	DIODE GEN PURP 100V 40A DO203AB
VS-40HF100	VISHAY	获取价格	DIODE GEN PURP 1KV 40A DO203AB
VS-40HF10M	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 40A, 100V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN
VS-40HF120	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 40A, 1200V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN
VS-40HF120M	VISHAY	获取价格	DIODE GEN PURP 1.2KV 40A DO203AB
VS-40HF140	VISHAY	获取价格	DIODE GEN PURP 1.4KV 40A DO203AB
VS-40HF140M	VISHAY	获取价格	DIODE GEN PURP 1.4KV 40A DO203AB
VS-40HF160	VISHAY	获取价格	DIODE GEN PURP 1.6KV 40A DO203AB
VS-40HF160M	VISHAY	获取价格	DIODE GEN PURP 1.6KV 40A DO203AB
VS-40HF20	VISHAY	获取价格	DIODE GEN PURP 200V 40A DO203AB

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