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VS-40HFL60S05 PDF预览

VS-40HFL60S05

更新时间: 2024-11-09 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 快速恢复二极管
页数 文件大小 规格书
13页 168K
描述
Rectifier Diode, 1 Phase, 1 Element, 40A, 600V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN

VS-40HFL60S05 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:DO-5, 1 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:18 weeks风险等级:5.71
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:FAST RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.95 V
JEDEC-95代码:DO-203ABJESD-30 代码:O-MUPM-D1
最大非重复峰值正向电流:500 A元件数量:1
相数:1端子数量:1
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:40 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:600 V
最大反向电流:100 µA最大反向恢复时间:0.18 µs
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-40HFL60S05 数据手册

 浏览型号VS-40HFL60S05的Datasheet PDF文件第2页浏览型号VS-40HFL60S05的Datasheet PDF文件第3页浏览型号VS-40HFL60S05的Datasheet PDF文件第4页浏览型号VS-40HFL60S05的Datasheet PDF文件第5页浏览型号VS-40HFL60S05的Datasheet PDF文件第6页浏览型号VS-40HFL60S05的Datasheet PDF文件第7页 
VS-40HFL, VS-70HFL, VS-85HFL Series  
www.vishay.com  
Vishay Semiconductors  
Fast Recovery Diodes  
(Stud Version), 40 A, 70 A, 85 A  
FEATURES  
• Short reverse recovery time  
• Low stored charge  
• Wide current range  
• Excellent surge capabilities  
• Stud cathode and stud anode versions  
• Types up to 100 VRRM  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DO-203AB (DO-5)  
TYPICAL APPLICATIONS  
• DC power supplies  
• Inverters  
PRODUCT SUMMARY  
• Converters  
IF(AV)  
40 A, 70 A, 85 A  
DO-203AB (DO-5)  
Single diode  
• Choppers  
Package  
• Ultrasonic systems  
Circuit configuration  
• Freewheeling diodes  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
40HFL  
70HFL  
70  
85HFL  
85  
UNITS  
A
40  
IF(AV)  
T
C maximum  
85  
85  
85  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
400  
700  
1100  
IFSM  
A
420  
730  
1151  
800  
2450  
6050  
I2t  
A2s  
730  
2240  
5523  
I2t  
11 300  
100 to 1000  
34 650  
100 to 1000  
85 560  
100 to 1000  
I2s  
VRRM  
Range  
Range  
V
See Recovery  
Characteristics table  
See Recovery  
Characteristics table  
See Recovery  
Characteristics table  
trr  
ns  
°C  
TJ  
-40 to 125  
-40 to 125  
-40 to 125  
Revision: 22-Jan-14  
Document Number: 93150  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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