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VS-40EPSPBF PDF预览

VS-40EPSPBF

更新时间: 2024-09-18 01:12:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 163K
描述
Very low forward voltage drop

VS-40EPSPBF 数据手册

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VS-40EPS..PbF Series, VS-40EPS..-M3 Series  
www.vishay.com  
Vishay Semiconductors  
High Voltage, Input Rectifier Diode, 40 A  
Base  
cathode  
FEATURES  
• Very low forward voltage drop  
• 150 °C max. operating junction temperature  
• Glass passivated pellet chip junction  
2
• Designed and qualified according to  
JEDEC®-JESD 47  
2
3
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
1
1
3
Available  
TO-247AC modified  
Cathode  
Anode  
APPLICATIONS  
• Input rectification  
PRODUCT SUMMARY  
Package  
TO-247AC modified (2 pins)  
• Vishay Semiconductors switches and output rectifiers  
which are available in identical package outlines  
IF(AV)  
40 A  
800 V to 1200 V  
1.1 V  
VR  
DESCRIPTION  
High voltage rectifiers optimized for very low forward  
voltage drop with moderate leakage.  
VF at IF  
IFSM  
475 A  
TJ max.  
Diode variation  
150 °C  
These devices are intended for use in main rectification  
(single or three phase bridge).  
Single die  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
Sinusoidal waveform  
Range  
VALUES  
40  
UNITS  
A
V
800/1200  
475  
A
VF  
40 A, TJ = 25 °C  
1.1  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM  
PEAK REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-40EPS08PbF, VS-40EPS08-M3  
VS-40EPS12PbF, VS-40EPS12-M3  
800  
900  
1
1200  
1300  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 105 °C, 180° conduction half sine wave  
40  
400  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
475  
800  
Maximum I2t for fusing  
I2t  
A2s  
1131  
11 310  
Maximum I2t for fusing  
I2t  
A2s  
Revision: 12-Oct-16  
Document Number: 94343  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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