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VS-30CTQ040HN3

更新时间： 2024-11-30 01:09:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 777K
描述
High frequency operation

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VS-30CTQ040HN3 数据手册

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VS-30CTQ0..HN3 Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 15 A  
FEATURES  
Base  
common  
cathode  
2
• 175 °C TJ operation  
• Very low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Anode  
Anode  
2
Common  
cathode  
1
3
TO-220AB  
• Guard ring for enhanced ruggedness and  
long term reliability  
• AEC-Q101 qualified meets JESD 201 class 2 whisker test  
PRODUCT SUMMARY  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
2 x 15 A  
VR  
35 V, 40 V, 45 V  
0.56 V  
DESCRIPTION  
VF at IF  
I
RM max.  
15 mA at 125 °C  
175 °C  
The VS-30CTQ... center tap Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. The proprietary barrier technology allows for  
reliable operation up to 175 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
TJ max.  
EAS  
27 mJ  
Package  
TO-220AC  
Diode variation  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform  
Range  
A
V
35 to 45  
1060  
tp = 5 μs sine  
A
VF  
20 Apk, TJ = 125 °C (per leg)  
Range  
0.56  
V
TJ  
-55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL VS-30CTQ035HN3 VS-30CTQ040HN3 VS-30CTQ045HN3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
35  
40  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 127 °C, rectangular waveform  
30  
A
5 μs sine or 3 μs rect. pulse  
1060  
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated load  
condition and with rated  
VRRM applied  
IFSM  
10 ms sine or 6 ms rect. pulse  
256  
20  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 3.0 A, L = 4.40 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3.0  
Revision: 05-Mar-14  
Document Number: 94959  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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