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VS-30CTQ050PBF

更新时间: 2024-11-07 12:47:19
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网
页数 文件大小 规格书
7页 166K
描述
Schottky Rectifier, 2 x 15 A

VS-30CTQ050PBF 技术参数

生命周期:Lifetime Buy包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.82 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:1000 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
最大重复峰值反向电压:50 V最大反向电流:800 µA
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN OVER NICKEL端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

VS-30CTQ050PBF 数据手册

 浏览型号VS-30CTQ050PBF的Datasheet PDF文件第2页浏览型号VS-30CTQ050PBF的Datasheet PDF文件第3页浏览型号VS-30CTQ050PBF的Datasheet PDF文件第4页浏览型号VS-30CTQ050PBF的Datasheet PDF文件第5页浏览型号VS-30CTQ050PBF的Datasheet PDF文件第6页浏览型号VS-30CTQ050PBF的Datasheet PDF文件第7页 
VS-30CTQ0...PbF Series, VS-30CTQ0...-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 15 A  
FEATURES  
Base  
common  
cathode  
2
• 150 °C TJ operation  
• Very low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength  
and moisture resistance  
Anode  
Anode  
2
Common  
cathode  
1
3
TO-220AB  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AB  
2 x 15 A  
50 V, 60 V  
0.56 V  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
DESCRIPTION  
VF at IF  
This center tap Schottky rectifier has been optimized for  
very low forward voltage drop, with moderate leakage. The  
proprietary barrier technology allows for reliable operation  
up to 150 °C junction temperature. Typical applications are  
in switching power supplies, converters, freewheeling  
diodes, and reverse battery protection.  
I
RM max.  
45 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
13 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform  
A
V
50/60  
tp = 5 μs sine  
1000  
A
VF  
15 Apk, TJ = 125 °C (per leg)  
Range  
0.56  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
VS-  
VS-  
30CTQ050-N3  
VS-  
VS-  
PARAMETER  
SYMBOL  
UNITS  
30CTQ050PbF  
30CTQ060PbF 30CTQ060-N3  
Maximum DC reverse voltage  
VR  
50  
50  
60  
60  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average  
forward current  
See fig. 5  
per device  
per leg  
30  
IF(AV)  
50 % duty cycle at TC = 105 °C, rectangular waveform  
15  
A
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
1000  
Following any rated load  
condition and with rated  
VRRM applied  
IFSM  
260  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH  
13  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.50  
Revision: 11-Oct-11  
Document Number: 94189  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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