Datasheet > VS-25TTS12FP-M3

VS-25TTS12FP-M3

更新时间： 2024-11-27 01:16:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	170K
描述
Thyristor High Voltage, Phase Control SCR,

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数据手册
替代型号

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VS-25TTS12FP-M3 数据手册

VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series

www.vishay.com

Vishay Semiconductors

Thyristor High Voltage, Phase Control SCR, 25 A

FEATURES

• Designed and qualified for industrial level

(A)

• Fully isolated package (V_INS= 2500 V_RMS

)

• UL E78996 pending

• 125 °C max. operating junction temperature

• Material categorization:

For definitions of compliance please see

Available

www.vishay.com/doc?99912

1 (K)

(G) 3

TO-220AB FULL-PAK

APPLICATIONS

• Typical usage is in input rectification crowbar (soft start)

and AC switch in motor control, UPS, welding, and battery

charge

PRODUCT SUMMARY

Package

Diode variation

I_T(AV)

TO-220AB FP

Single SCR

16 A

DESCRIPTION

The VS-25TTS...FP... high voltage series of silicon

controlled rectifiers are specifically designed for medium

power switching and phase control applications. The glass

passivation technology used has reliable operation up to

125 °C junction temperature.

_DRM/V_RRM

800 V, 1200 V

1.25 V

V_TM

I_GT

45 mA

T_J

- 40 °C to 125 °C

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

Capacitive input filter T_A= 55 °C, T_J= 125 °C,

common heatsink of 1 °C/W

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

UNITS

I_T(AV)

Sinusoidal waveform

I_RMS

_RRM/V_DRM

I_TSM

V_T

800/1200

350

16 A, T_J= 25 °C

1.25

dV/dt

dI/dt

T_J

500

V/μs

A/μs

°C

150

- 40 to 125

VOLTAGE RATINGS

V_RRM, MAXIMUM PEAK

REVERSE VOLTAGE

V_DRM, MAXIMUM PEAK

DIRECT VOLTAGE

I_RRM/I_DRM

AT 125 °C

PART NUMBER

VS-25TTS08FPPbF, VS-25TTS08FP-M3

VS-25TTS12FPPbF, VS-25TTS12FP-M3

800

1200

Revision: 26-Jul-13

Document Number: 94384

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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VS-25TTS12FP-M3 替代型号

型号	品牌	替代类型	描述	数据表
VS-25TTS12FPPBF	VISHAY	类似代替	Silicon Controlled Rectifier, 16000mA I(T), 1200V V(DRM),

与VS-25TTS12FP-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-25TTS12FPPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 16000mA I(T), 1200V V(DRM),
VS-25TTS12HM3	VISHAY	获取价格	Thyristor High Voltage Phase Control SCR, 25 A
VS-25TTS12-M3	VISHAY	获取价格	Thyristor High Voltage, Phase Control SCR, 25 A
VS-25TTS12PbF	VISHAY	获取价格	Thyristor High Voltage, Phase Control SCR, 25 A
VS-25TTS12S2LHM3	VISHAY	获取价格	Thyristor, Surface-Mount, Phase Control SCR, 16 A
VS-25TTS12S2L-M3	VISHAY	获取价格	Thyristor, Surface-Mount, Phase Control SCR, 16 A
VS-25TTS12SLHM3	VISHAY	获取价格	Thyristor, Surface Mount, Phase Control SCR, 16 A
VS-25TTS12S-M3	VISHAY	获取价格	Silicon Controlled Rectifier, 25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-263AB
VS-25TTS12SPBF	VISHAY	获取价格	Thyristor, Surface Mount, Phase Control SCR, 16 A
VS-25TTS12STRL-M3	VISHAY	获取价格	Silicon Controlled Rectifier, 25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-263AB

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