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VS-25TTS12S-M3 PDF预览

VS-25TTS12S-M3

更新时间: 2024-11-26 14:31:39
品牌 Logo 应用领域
威世 - VISHAY 栅极
页数 文件大小 规格书
7页 172K
描述
Silicon Controlled Rectifier, 25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-263AB, D2PAK-3/2

VS-25TTS12S-M3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:5.61外壳连接:ANODE
配置:SINGLE最大直流栅极触发电流:45 mA
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大均方根通态电流:25 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
触发设备类型:SCRBase Number Matches:1

VS-25TTS12S-M3 数据手册

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VS-25TTS08S-M3, VS-25TTS12S-M3 Series  
www.vishay.com  
Vishay Semiconductors  
Thyristor, Surface Mount, Phase Control SCR, 16 A  
FEATURES  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Anode  
2
• Designed  
and  
qualified  
according  
JEDEC®-JESD47  
2
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
3
1
3
Cathode Gate  
1
TO-263AB (D2PAK)  
APPLICATIONS  
• Input rectification (soft start)  
PRODUCT SUMMARY  
• Vishay input diodes, switches and output rectifiers which  
are available in identical package outlines  
Package  
Diode variation  
IT(AV)  
TO-263AB (D2PAK)  
Single SCR  
16 A  
DESCRIPTION  
The VS-25TTS...S-M3 High Voltage Series of silicon  
controlled rectifiers are specifically designed for medium  
power switching and phase control applications. The glass  
passivation technology used has reliable operation up to  
125 °C junction temperature.  
V
DRM/VRRM  
800 V, 1200 V  
1.25 V  
VTM  
IGT  
45 mA  
TJ  
- 40 to 125 °C  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
NEMA FR-4 or G10 glass fabric-based epoxy  
with 4 oz. (140 μm) copper  
3.5  
5.5  
A
Aluminum IMS, RthCA = 15 °C/W  
8.5  
13.5  
25.0  
Aluminum IMS with heatsink, RthCA = 5 °C/W  
16.5  
Note  
TA = 55 °C, TJ = 125 °C, footprint 300 mm2  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
16  
UNITS  
IT(AV)  
Sinusoidal waveform  
A
IRMS  
25  
VRRM/VDRM  
ITSM  
800 to 1200  
350  
V
A
VT  
16 A, TJ = 25 °C  
1.25  
V
dV/dt  
dI/dt  
500  
V/μs  
A/μs  
°C  
150  
TJ  
- 40 to 125  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VDRM, MAXIMUM PEAK  
DIRECT VOLTAGE  
V
IRRM/IDRM,  
AT 125 °C  
mA  
PART NUMBER  
VS-25TTS08S-M3  
VS-25TTS12S-M3  
800  
800  
10  
1200  
1200  
Revision: 27-Jan-14  
Document Number: 94895  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-25TTS12S-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-25TTS12SPBF VISHAY

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