VS-25TTS08S-M3, VS-25TTS12S-M3 Series
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Vishay Semiconductors
Thyristor, Surface Mount, Phase Control SCR, 16 A
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
Anode
2, 4
• Designed
and
qualified
according
JEDEC®-JESD 47
2
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
1
1
3
3
Cathode Gate
APPLICATIONS
D2PAK (TO-263AB)
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
PRIMARY CHARACTERISTICS
IT(AV)
16 A
V
DRM/VRRM
800 V, 1200 V
1.25 V
DESCRIPTION
The VS-25TTS...S-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
VTM
IGT
45 mA
TJ
-40 to +125 °C
D2PAK (TO-263AB)
Single SCR
Package
Circuit configuration
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
3.5
5.5
A
Aluminum IMS, RthCA = 15 °C/W
8.5
13.5
25.0
Aluminum IMS with heatsink, RthCA = 5 °C/W
16.5
Note
TA = 55 °C, TJ = 125 °C, footprint 300 mm2
•
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
16
UNITS
IT(AV)
Sinusoidal waveform
A
IRMS
25
V
RRM/VDRM
800 to 1200
350
V
A
ITSM
VT
16 A, TJ = 25 °C
1.25
V
dV/dt
dI/dt
TJ
500
V/μs
A/μs
°C
150
-40 to +125
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM,
AT 125 °C
mA
PART NUMBER
VS-25TTS08S-M3
VS-25TTS12S-M3
800
800
10
1200
1200
Revision: 04-Jan-18
Document Number: 96414
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000