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VS-25TTS16STRR-M3 PDF预览

VS-25TTS16STRR-M3

更新时间: 2024-11-02 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 栅极
页数 文件大小 规格书
8页 202K
描述
Silicon Controlled Rectifier, 25A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-263AB, D2PAK-3/2

VS-25TTS16STRR-M3 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:5.7Is Samacsys:N
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:45 mAJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大均方根通态电流:25 A断态重复峰值电压:1600 V
重复峰值反向电压:1600 V表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:SCR
Base Number Matches:1

VS-25TTS16STRR-M3 数据手册

 浏览型号VS-25TTS16STRR-M3的Datasheet PDF文件第2页浏览型号VS-25TTS16STRR-M3的Datasheet PDF文件第3页浏览型号VS-25TTS16STRR-M3的Datasheet PDF文件第4页浏览型号VS-25TTS16STRR-M3的Datasheet PDF文件第5页浏览型号VS-25TTS16STRR-M3的Datasheet PDF文件第6页浏览型号VS-25TTS16STRR-M3的Datasheet PDF文件第7页 
VS-25TTS16S-M3 Series  
www.vishay.com  
Vishay Semiconductors  
Thyristor Surface Mount, Phase Control SCR, 16 A  
FEATURES  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
Anode  
2, 4  
4
• Designed  
JEDEC®-JESD47  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
and  
qualified  
according  
2
3
1
3
Cathode Gate  
1
TO-263AB (D2PAK)  
APPLICATIONS  
• Input rectification (soft start)  
PRODUCT SUMMARY  
• Vishay input diodes, switches and output rectifiers which  
are available in identical package outlines  
Package  
Diode variation  
IT(AV)  
TO-263AB (D2PAK)  
Single SCR  
16 A  
DESCRIPTION  
The VS-25TTS16S-M3 of silicon controlled rectifiers is  
specifically designed for medium power switching and  
phase control applications. The glass passivation  
technology used has reliable operation up to 125 °C junction  
temperature.  
V
DRM/VRRM  
1600 V  
VTM  
1.25 V  
IGT  
45 mA  
TJ  
-40 to 125 °C  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
NEMA FR-4 or G10 glass fabric-based epoxy  
with 4 oz. (140 μm) copper  
3.5  
5.5  
A
Aluminum IMS, RthCA = 15 °C/W  
8.5  
13.5  
25.0  
Aluminum IMS with heatsink, RthCA = 5 °C/W  
16.5  
Note  
TA = 55 °C, TJ = 125 °C, footprint 300 mm2  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
16  
UNITS  
IT(AV)  
Sinusoidal waveform  
A
IRMS  
25  
VRRM/VDRM  
ITSM  
1600  
350  
V
A
VT  
16 A, TJ = 25 °C  
1.25  
V
dV/dt  
dI/dt  
500  
V/μs  
A/μs  
°C  
150  
TJ  
-40 to +125  
VOLTAGE RATINGS  
PART NUMBER  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VDRM, MAXIMUM PEAK  
DIRECT VOLTAGE  
V
IRRM/IDRM,  
AT 125 °C  
mA  
VS-25TTS16S-M3  
1600  
1600  
10  
Revision: 08-Jul-15  
Document Number: 94896  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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