Datasheet > VS-25TTS16S2L-M3

VS-25TTS16S2L-M3

更新时间： 2024-11-03 14:51:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	201K
描述
Thyristor Surface Mount, Phase Control SCR, 16 A

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VS-25TTS16S2L-M3 数据手册

VS-25TTS16S2L-M3

Vishay Semiconductors

www.vishay.com

Thyristor Surface-Mount, Phase Control SCR, 16 A

FEATURES

Anode

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C

• Designed

and

qualified

according

JEDEC^®-JESD 47

• Meets JESD 201 class 2 whisker test

• Flexible solution for reliable AC power rectification

Gate

• Easy control peak current at charger power up to reduce

passive / electromechanical components

Cathode

D²PAK 2L (TO-263AB 2L)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

APPLICATIONS

• On-board and off-board EV / HEV battery chargers

• Renewable energy inverters

3D Models

DESCRIPTION

PRIMARY CHARACTERISTICS

The VS-25TTS16S2L-M3 high voltage series of silicon

controlled rectifiers is specifically designed for medium

power switching and phase control applications.

I_T(AV)

16 A

V_DRM/V_RRM

1600 V

1.25 V

V_TM

MECHANICAL DATA

Case: D²PAK 2L (TO-263AB 2L)

Molding compound meets UL 94 V-0 flammability rating

I_GT

45 mA

T_J

-40 °C to +125 °C

D²PAK 2L (TO-263AB 2L)

Single SCR

Package

Terminals: matte tin plated leads, solderable per

J-STD-002

Circuit configuration

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

NEMA FR-4 or G10 glass fabric-based epoxy

with 4 oz. (140 μm) copper

3.5

5.5

Aluminum IMS, R_thCA= 15 °C/W

8.5

13.5

25.0

Aluminum IMS with heatsink, R_thCA= 5 °C/W

16.5

Note

T_A= 55 °C, T_J= 125 °C, footprint 300 mm²

•

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

UNITS

I_T(AV)

Sinusoidal waveform

I_RMS

_RRM/V_DRM

1600

350

I_TSM

V_T

16 A, T_J= 25 °C

1.25

dV/dt

dI/dt

T_J

500

V/μs

A/μs

°C

150

-40 to +125

VOLTAGE RATINGS

PART NUMBER

V_RRM, MAXIMUM PEAK

REVERSE VOLTAGE

V_DRM, MAXIMUM PEAK

DIRECT VOLTAGE

I_RRM/I_DRM,

AT 125 °C

VS-25TTS16SL-M3

1600

Revision: 25-Jan-2022

Document Number: 96980

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-25TTS16S2L-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-25TTS16SLHM3	VISHAY	获取价格	Thyristor Surface Mount, Phase Control SCR, 16 A
VS-25TTS16SPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 25 A, 1600 V, SCR, HALOGEN FREE AND ROHS COMPLIANT, SMD-220,
VS-25TTS16STRR-M3	VISHAY	获取价格	Silicon Controlled Rectifier, 25A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-263AB
VS-25TTS16STRRPBF	VISHAY	获取价格	NEW INPUT THYRISTOR - D2PAK-E3
VS-25TTSS08S-M3	VISHAY	获取价格	Thyristor, Surface Mount, Phase Control SCR, 16 A
VS26417801CTG-10	ETC	获取价格	x64 SDRAM Module
VS26417801CTG-8H	ETC	获取价格	x64 SDRAM Module
VS26417801CTG-8L	ETC	获取价格	x64 SDRAM Module
VS26417801CTS-10	ETC	获取价格	x64 SDRAM Module
VS26417801CTS-8H	ETC	获取价格	x64 SDRAM Module

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