Datasheet > VS-25CTQS-M3

VS-25CTQS-M3

更新时间： 2024-11-16 01:09:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	197K
描述
Center tap configuration

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中文翻译

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数据手册

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VS-25CTQS-M3 数据手册

VS-25CTQ...S-M3, VS-25CTQ...-1-M3 Series

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 2 x 15 A

FEATURES

• 150 °C T_Joperation

D²PAK

TO-262

• Center tap configuration

• Very low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Base

common

cathode

Base

common

cathode

• Guard ring for enhanced ruggedness and long term

reliability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Designed and qualified according to JEDEC^®-JESD 47

Common

cathode

Common

cathode

Anode

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

VS-25CTQ...S-M3

VS-25CTQ...-1-M3

DESCRIPTION

The VS-25CTQ... center tap Schottky rectifier series has

been optimized for very low forward voltage drop, with

moderate leakage. The proprietary barrier technology allows

for reliable operation up to 150 °C junction temperature.

Typical applications are in switching power supplies,

converters, freewheeling diodes, and reverse battery

protection.

PRODUCT SUMMARY

I_F(AV)

2 x 15 A

35 V to 45 V

V_R

V_Fat I_F

I_RM

0.50 V

70 mA at 125 °C

150 °C

T_Jmax.

E_AS



20 mJ

TO-263AB (D²PAK), TO-262AA

Common cathode



Package

Diode variation

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

Rectangular waveform

Range

VALUES

UNITS

35 to 45

990

t_p= 5 μs sine

V_F

15 A_pk, T_J= 125 °C (per leg)

Range

0.50

T_J

- 55 to 150

°C

VOLTAGE RATINGS

VS-25CTQ035S-M3

VS-25CTQ040S-M3

VS-25CTQ045S-M3

PARAMETER

SYMBOL

UNITS

VS-25CTQ035-1-M3 VS-25CTQ040-1-M3 VS-25CTQ045-1-M3

Maximum DC reverse voltage

V_R

Maximum working peak reverse voltage

V_RWM

Revision: 26-Feb-14

Document Number: 94930

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-25CTQS-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-25ETS08S-M3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 800V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-25ETS08SPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMP
VS-25ETS08STRL-M3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 800V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-25ETS08STRLPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMP
VS-25ETS08TRRPBF	VISHAY	获取价格	RECTIFIER DIODE
VS-25ETS10S-M3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 1000V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-25ETS10STRL-M3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 1000V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-25ETS10TRLPBF	VISHAY	获取价格	RECTIFIER DIODE
VS-25ETS12PBF	VISHAY	获取价格	RECTIFIER DIODE
VS-25ETS12S2LHM3	VISHAY	获取价格	High Voltage Surface-Mount Input Rectifier Diode, 25 A

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