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VS-25ETS12S-M3

更新时间： 2024-11-15 22:52:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 163K
描述
DIODE GEN PURP 1.2KV 25A TO263AB

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VS-25ETS12S-M3 数据手册

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VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3 Series  
www.vishay.com  
Vishay Semiconductors  
High Voltage Surface Mount Input Rectifier Diode, 25 A  
FEATURES  
Base  
• Glass passivated pellet chip junction  
cathode  
2
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 245 °C  
• Designed and qualified according to  
JEDEC®-JESD 47  
2
1
1
3
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
Anode  
Anode  
D2PAK (TO-263AB)  
APPLICATIONS  
• Input rectification  
PRIMARY CHARACTERISTICS  
• Vishay switches and output rectifiers which are available  
in identical package outlines  
IF(AV)  
25 A  
VR  
VF at IF  
800 V, 1000 V, 1200 V  
1.14 V  
DESCRIPTION  
IFSM  
300 A  
The VS-25ETS..S-M3 rectifier High Voltage Series has been  
optimized for very low forward voltage drop, with moderate  
leakage. The glass passivation technology used has reliable  
operation up to 150 °C junction temperature.  
Tj max.  
150 °C  
D2PAK (TO-263AB)  
Package  
Circuit configuration  
Single  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
Capacitive input filter TA = 55 °C, TJ = 125 °C  
common heatsink of 1 °C/W  
20  
23  
A
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
25  
UNITS  
Sinusoidal waveform  
A
V
800 to 1200  
300  
A
VF  
10 A, TJ = 25 °C  
1.0  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
I
RRM AT 150 °C  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
mA  
VS-25ETS08S-M3  
VS-25ETS10S-M3  
VS-25ETS12S-M3  
800  
1000  
1200  
900  
1100  
1300  
1
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
25  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 106 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
250  
A
Maximum peak one cycle   
non-repetitive surge current  
IFSM  
300  
316  
Maximum I2t for fusing  
Maximum I2t for fusing  
Revision: 27-Oct-17  
I2t  
A2s  
442  
I2t  
4420  
A2s  
Document Number: 94890  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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VS-25F120 VISHAY

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 		Standard Recovery Diodes (Stud Version), 25 A

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