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VS-25ETS12SPBF PDF预览

VS-25ETS12SPBF

更新时间: 2024-11-15 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 高压大电源高功率电源二极管
页数 文件大小 规格书
7页 158K
描述
Rectifier Diode, 1 Phase, 1 Element, 25A, 1200V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3

VS-25ETS12SPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.39
Is Samacsys:N应用:HIGH VOLTAGE HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.14 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:300 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:1200 V子类别:Rectifier Diodes
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-25ETS12SPBF 数据手册

 浏览型号VS-25ETS12SPBF的Datasheet PDF文件第2页浏览型号VS-25ETS12SPBF的Datasheet PDF文件第3页浏览型号VS-25ETS12SPBF的Datasheet PDF文件第4页浏览型号VS-25ETS12SPBF的Datasheet PDF文件第5页浏览型号VS-25ETS12SPBF的Datasheet PDF文件第6页浏览型号VS-25ETS12SPBF的Datasheet PDF文件第7页 
VS-25ETS..SPbF Series  
www.vishay.com  
Vishay Semiconductors  
High Voltage Surface Mount Input Rectifier Diode, 25 A  
FEATURES  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
Base  
cathode  
2
• Glass passivated pellet chip junction  
• Designed and qualified according to  
JEDEC®-JESD 47  
2
3
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
1
3
1
TO-263AB (D2PAK)  
Anode  
Anode  
APPLICATIONS  
• Input rectification  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK)  
25 A  
• Vishay switches and output rectifiers which are available  
in identical package outlines  
IF(AV)  
VR  
800 V, 1000 V, 1200 V  
1.14 V  
DESCRIPTION  
VF at IF  
IFSM  
The VS-25ETS..SPbF rectifier High Voltage Series has been  
optimized for very low forward voltage drop, with moderate  
leakage. The glass passivation technology used has reliable  
operation up to 150 °C junction temperature.  
300 A  
Tj max.  
Diode variation  
150 °C  
Single die  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
Capacitive input filter TA = 55 °C, TJ = 125 °C  
common heatsink of 1 °C/W  
20  
23  
A
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
25  
UNITS  
Sinusoidal waveform  
A
V
800 to 1200  
300  
A
VF  
10 A, TJ = 25 °C  
1.0  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
I
RRM AT 150 °C  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
mA  
VS-25ETS08SPbF  
VS-25ETS10SPbF  
VS-25ETS12SPbF  
800  
1000  
1200  
900  
1100  
1300  
1
Revision: 12-Feb-16  
Document Number: 94342  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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