Datasheet > VS-25ETS12S2LHM3

VS-25ETS12S2LHM3

更新时间： 2024-11-16 14:55:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	191K
描述
High Voltage Surface-Mount Input Rectifier Diode, 25 A

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VS-25ETS12S2LHM3 数据手册

Not for New Designs - Alternative Device: VS-30ETS12S2LHM3

VS-25ETS12S2LHM3

Vishay Semiconductors

www.vishay.com

High Voltage Surface-Mount Input Rectifier Diode, 25 A

FEATURES

Base

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C

cathode

• 175 °C maximum operating junction

temperature

• Glass passivated pellet chip junction

• AEC-Q101 qualified

Anode

• Meets JESD 201 class 2 whisker test

• Flexible solution for reliable AC power rectification

D²PAK 2L (TO-263AB 2L)

LINKS TO ADDITIONAL RESOURCES

• High surge, low V_Frugged blocking diode for DC charging

stations

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3D Models

APPLICATIONS

PRIMARY CHARACTERISTICS

• Input rectification

I_F(AV)

25 A

• On-board and off-board EV / HEV battery chargers

V_R

1200 V

1.14 V

255 A

175 °C

V_Fat I_F

I_FSM

DESCRIPTION

The VS-25ETS12SLHM3 rectifier High Voltage Series has

been optimized for very low forward voltage drop, with

moderate leakage.

T_Jmax.

Package

D²PAK 2L (TO-263AB 2L)

Circuit configuration

Single

MECHANICAL DATA

Case: D²PAK 2L (TO-263AB 2L)

Molding compound meets UL 94 V-0 flammability rating

Terminals: matte tin plated leads, solderable per

J-STD-002

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

Capacitive input filter T_A= 55 °C, T_J= 125 °C

common heatsink of 1 °C/W

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

1200

255

V_F

10 A, T_J= 25 °C

1.0

T_J

-40 to +175

°C

VOLTAGE RATINGS

PART NUMBER

V_RSM, MAXIMUM

V_RRM, MAXIMUM PEAK

REVERSE VOLTAGE

NON-REPETITIVE PEAK REVERSE

_RRMAT 175 °C

VOLTAGE

VS-25ETS12S2LHM3

1200

1300

Revision: 31-Jul-2023

Document Number: 96839

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-25ETS12S2LHM3相关器件

型号	品牌	获取价格	描述	数据表
VS-25ETS12SLHM3	VISHAY	获取价格	High Voltage Surface-Mount Input Rectifier Diode, 25 A
VS-25ETS12S-M3	VISHAY	获取价格	DIODE GEN PURP 1.2KV 25A TO263AB
VS-25ETS12SPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 1200V V(RRM), Silicon, HALOGEN FREE AND ROHS COM
VS-25ETS12STRLPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 1200V V(RRM), Silicon, HALOGEN FREE AND ROHS COM
VS-25ETS12STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 1200V V(RRM), Silicon, HALOGEN FREE AND ROHS COM
VS-25ETS12TRRPBF	VISHAY	获取价格	RECTIFIER DIODE
VS-25F	VISHAY	获取价格	Standard Recovery Diodes
VS-25F10	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
VS-25F100	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 1000V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
VS-25F100M	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 1000V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

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