Datasheet > VS-25ETS12S2LHM3

VS-25ETS12S2LHM3

更新时间： 2023-12-06 20:10:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	191K
描述
High Voltage Surface-Mount Input Rectifier Diode, 25 A

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VS-25ETS12S2LHM3 数据手册

Not for New Designs - Alternative Device: VS-30ETS12S2LHM3

VS-25ETS12S2LHM3

Vishay Semiconductors

www.vishay.com

180

170

160

150

140

130

120

110

100

R_thJC(DC) = 0.9 °C/W

T_J= 175 °C

RMS limit

Conduction

30°

60°

Conduction

90°

angle

120°

180

180°

60°

90° 120°

30°

Average On-State Current (A)

I_F(AV)- Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

Fig. 4 - Forward Power Loss Characteristics

180

170

160

150

140

130

120

110

100

250

200

150

100

At any rated load condition and with

rated V_RRMapplied following surge

R_thJC(DC) = 0.9 °C/W

Initial T_J= 175 °C

At 60 Hz (0.0083 s)

Conduction

angle

At 50 Hz (0.0100 s)

90°

180°

120°

30°

60°

100

10 15 20 25 30 35 40 45

Number of Equal Amplitude Half

Cycle Current Pulses (N)

Average On-State Current (A)

Fig. 2 - Current Rating Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

300

Maximum non-repetitive surge

current vs pulse train duration

T_J= 175 °C

RMS limit

250

200

150

100

Initial T_J= 175 °C

No voltage applied

Rated V_RRMapplied

Conduction

angle

30°

60°

90°

120°

180°

0.01

0.1

t_p- Pulse Train Duration (s)

I_F(AV)- Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

Fig. 6 - Maximum Non-Repetitive Surge Current

Revision: 31-Jul-2023

Document Number: 96839

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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