Datasheet > VS-25ETS12PBF

VS-25ETS12PBF

更新时间： 2024-11-15 15:57:39

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
7页	152K
描述
RECTIFIER DIODE

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中文翻译

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技术参数
数据手册

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VS-25ETS12PBF 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.7	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

VS-25ETS12PBF 数据手册

VS-25ETS..SPbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 25 A

Base

cathode

DESCRIPTION/FEATURES

The VS-25ETS..SPbF rectifier High Voltage Series

has been optimized for very low forward

voltage drop, with moderate leakage. The glass

passivation technology used has reliable

operation up to 150 °C junction temperature.

Typical applications are in input rectification and

these products are designed to be used with

Vishay HPP switches and output rectifiers which

are available in identical package outlines.

D²PAK

Anode

PRODUCT SUMMARY

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

V_Fat 10 A

< 1 V

300 A

• Compliant to RoHS directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21 definition

• Designed and qualified for industrial level

I_FSM

V_RRM

800 V to 1200 V

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE

UNITS

Capacitive input filter T_A= 55 °C, T_J= 125 °C

common heatsink of 1 °C/W

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

800 to 1200

300

V_F

10 A, T_J= 25 °C

1.0

T_J

- 40 to 150

°C

VOLTAGE RATINGS

V_RRM, MAXIMUM PEAK

REVERSE VOLTAGE

_RSM, MAXIMUM NON-REPETITIVE

_RRMAT 150 °C

PART NUMBER

PEAK REVERSE VOLTAGE

VS-25ETS08SPbF

VS-25ETS10SPbF

VS-25ETS12SPbF

800

1000

1200

900

1100

1300

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

T_C= 106 °C, 180° conduction half sine wave

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

t = 0.1 ms to 10 ms, no voltage reapplied

VALUES

UNITS

Maximum average forward current

I_F(AV)

250

Maximum peak one cycle

non-repetitive surge current

I_FSM

300

316

Maximum I²t for fusing

I²t

A²s

442

Maximum I²√t for fusing

I²√t

4420

A²√s

Document Number: 94342

Revision: 09-Apr-10

For technical questions, contact: diodestech@vishay.com

www.vishay.com

12 3 4 5 6 7

中文翻译

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与VS-25ETS12PBF相关器件

型号	品牌	获取价格	描述	数据表
VS-25ETS12S2LHM3	VISHAY	获取价格	High Voltage Surface-Mount Input Rectifier Diode, 25 A
VS-25ETS12SLHM3	VISHAY	获取价格	High Voltage Surface-Mount Input Rectifier Diode, 25 A
VS-25ETS12S-M3	VISHAY	获取价格	DIODE GEN PURP 1.2KV 25A TO263AB
VS-25ETS12SPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 1200V V(RRM), Silicon, HALOGEN FREE AND ROHS COM
VS-25ETS12STRLPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 1200V V(RRM), Silicon, HALOGEN FREE AND ROHS COM
VS-25ETS12STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 1200V V(RRM), Silicon, HALOGEN FREE AND ROHS COM
VS-25ETS12TRRPBF	VISHAY	获取价格	RECTIFIER DIODE
VS-25F	VISHAY	获取价格	Standard Recovery Diodes
VS-25F10	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
VS-25F100	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 1000V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

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