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VS-16CTQ100HN3 PDF预览

VS-16CTQ100HN3

更新时间： 2024-02-01 15:40:20
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 758K
描述
Low forward voltage drop

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VS-16CTQ100HN3 数据手册

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VS-16CTQ...HN3 Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 8 A  
FEATURES  
Base  
common  
cathode  
2
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
3
2
Anode  
Anode  
2
1
Common  
cathode  
1
3
TO-220AB  
• Guard ring for enhanced ruggedness and long  
term reliability  
• AEC-Q101 qualified  
PRODUCT SUMMARY  
• Meets JESD 201 class 2 whisker test  
Package  
TO-220AB  
2 x 8 A  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
VR  
60 V, 80 V, 100 V  
0.58 V  
DESCRIPTION  
VF at IF  
I
RM max.  
7 mA at 125 °C  
175 °C  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Common cathode  
7.5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
16  
UNITS  
Rectangular waveform  
A
V
60 to 100  
850  
tp = 5 μs sine  
A
VF  
8 Apk, TJ = 125 °C (per leg)  
Range  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-16CTQ060HN3  
60  
VS-16CTQ080HN3  
VS-16CTQ100HN3  
100  
UNITS  
Maximum DC reverse voltage  
VR  
80  
V
Maximum working peak  
reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward  
per leg  
8
current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 148 °C, rectangular waveform  
A
per device  
16  
Maximum peak one cycle non-repetitive  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
Following any rated load  
condition and with rated  
VRRM applied  
surge current per leg  
See fig. 7  
IFSM  
A
275  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
Revision: 05-Mar-14  
Document Number: 94848  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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