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VS-16CTQ100STRLPBF PDF预览

VS-16CTQ100STRLPBF

更新时间: 2024-11-23 13:15:31
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网高功率电源
页数 文件大小 规格书
7页 145K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

VS-16CTQ100STRLPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.31Is Samacsys:N
其他特性:FREEWHEELING DIODE应用:HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:850 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:100 V表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN (SN) - WITH NICKEL (NI) BARRIER
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-16CTQ100STRLPBF 数据手册

 浏览型号VS-16CTQ100STRLPBF的Datasheet PDF文件第2页浏览型号VS-16CTQ100STRLPBF的Datasheet PDF文件第3页浏览型号VS-16CTQ100STRLPBF的Datasheet PDF文件第4页浏览型号VS-16CTQ100STRLPBF的Datasheet PDF文件第5页浏览型号VS-16CTQ100STRLPBF的Datasheet PDF文件第6页浏览型号VS-16CTQ100STRLPBF的Datasheet PDF文件第7页 
16CTQ...PbF Series  
Vishay High Power Products  
Schottky Rectifier, 2 x 8 A  
FEATURES  
• 175 °C TJ operation  
Base  
common  
cathode  
2
Pb-free  
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
Available  
RoHS*  
COMPLIANT  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength and  
moisture resistance  
Anode  
Anode  
2
Common  
cathode  
1
3
TO-220AB  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for industrial level  
DESCRIPTION  
PRODUCT SUMMARY  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
IF(AV)  
2 x 8 A  
VR  
60 to 100 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
16  
UNITS  
Rectangular waveform  
A
V
60 to 100  
850  
tp = 5 µs sine  
A
VF  
8 Apk, TJ = 125 °C (per leg)  
Range  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
16CTQ060PbF  
60  
16CTQ080PbF  
16CTQ100PbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
80  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
8
IF(AV)  
50 % duty cycle at TC = 148 °C, rectangular waveform  
A
per device  
16  
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
Following any rated load  
condition and with rated  
VRRM applied  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
IFSM  
A
275  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94146  
Revision: 13-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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