VS-16CTQ...HN3 Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 8 A
FEATURES
Base
common
cathode
2
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
3
2
Anode
Anode
2
1
Common
cathode
1
3
TO-220AB
• Guard ring for enhanced ruggedness and long
term reliability
• AEC-Q101 qualified
PRODUCT SUMMARY
• Meets JESD 201 class 2 whisker test
Package
TO-220AB
2 x 8 A
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
IF(AV)
VR
60 V, 80 V, 100 V
0.58 V
DESCRIPTION
VF at IF
I
RM max.
7 mA at 125 °C
175 °C
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
TJ max.
Diode variation
EAS
Common cathode
7.5 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
16
UNITS
Rectangular waveform
A
V
60 to 100
850
tp = 5 μs sine
A
VF
8 Apk, TJ = 125 °C (per leg)
Range
0.58
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-16CTQ060HN3
60
VS-16CTQ080HN3
VS-16CTQ100HN3
100
UNITS
Maximum DC reverse voltage
VR
80
V
Maximum working peak
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward
per leg
8
current
See fig. 5
IF(AV)
50 % duty cycle at TC = 148 °C, rectangular waveform
A
per device
16
Maximum peak one cycle non-repetitive
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
850
Following any rated load
condition and with rated
VRRM applied
surge current per leg
See fig. 7
IFSM
A
275
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
Revision: 05-Mar-14
Document Number: 94848
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000