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VS-16CTQ60SPBF PDF预览

VS-16CTQ60SPBF

更新时间: 2024-11-21 20:10:55
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
6页 115K
描述
60V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

VS-16CTQ60SPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknown风险等级:5.49
其他特性:FREEWHEELING DIODE应用:HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:850 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:60 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
Base Number Matches:1

VS-16CTQ60SPBF 数据手册

 浏览型号VS-16CTQ60SPBF的Datasheet PDF文件第2页浏览型号VS-16CTQ60SPBF的Datasheet PDF文件第3页浏览型号VS-16CTQ60SPBF的Datasheet PDF文件第4页浏览型号VS-16CTQ60SPBF的Datasheet PDF文件第5页浏览型号VS-16CTQ60SPBF的Datasheet PDF文件第6页 
VS-16CTQ...SPbF, VS-16CTQ...-1PbF Series  
Vishay High Power Products  
Schottky Rectifier, 2 x 8 A  
VS-16CTQ...-1PbF  
FEATURES  
VS-16CTQ...SPbF  
• 175 °C TJ operation  
• Center tap configuration  
• Low forward voltage drop  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• High frequency operation  
• Guard ring for enhanced ruggedness and long  
term reliability  
Base  
common  
cathode  
Base  
common  
cathode  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
D2PAK  
TO-262  
DESCRIPTION  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 8 A  
VR  
60 V to 100 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
16  
UNITS  
Rectangular waveform  
A
V
60 to 100  
850  
tp = 5 μs sine  
A
VF  
8 Apk, TJ = 125 °C (per leg)  
Range  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
VS-16CTQ060SPbF  
VS-16CTQ060-1PbF VS-16CTQ080-1PbF VS-16CTQ100-1PbF  
VS-16CTQ080SPbF  
VS-16CTQ100SPbF  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
60  
80  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
8
IF(AV)  
50 % duty cycle at TC = 148 °C, rectangular waveform  
A
per device  
16  
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
IFSM  
A
275  
VRRM applied  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
Document Number: 94145  
Revision: 12-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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