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VS-16CTQ100-N3 PDF预览

VS-16CTQ100-N3

更新时间: 2024-11-10 01:07:59
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 165K
描述
Low forward voltage drop

VS-16CTQ100-N3 技术参数

生命周期:Obsolete包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.29其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.88 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:850 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:100 V
最大反向电流:550 µA子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-16CTQ100-N3 数据手册

 浏览型号VS-16CTQ100-N3的Datasheet PDF文件第2页浏览型号VS-16CTQ100-N3的Datasheet PDF文件第3页浏览型号VS-16CTQ100-N3的Datasheet PDF文件第4页浏览型号VS-16CTQ100-N3的Datasheet PDF文件第5页浏览型号VS-16CTQ100-N3的Datasheet PDF文件第6页浏览型号VS-16CTQ100-N3的Datasheet PDF文件第7页 
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 8 A  
FEATURES  
Base  
common  
cathode  
2
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength  
and moisture resistance  
Anode  
Anode  
2
Common  
cathode  
1
3
TO-220AB  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AB  
2 x 8 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
60 V, 80 V, 100 V  
0.58 V  
DESCRIPTION  
VF at IF  
I
RM max.  
7 mA at 125 °C  
175 °C  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Common cathode  
7.5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
16  
UNITS  
Rectangular waveform  
A
V
60 to 100  
850  
tp = 5 μs sine  
A
VF  
8 Apk, TJ = 125 °C (per leg)  
Range  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
VS-  
VS-  
VS-  
VS-  
VS-  
VS-  
PARAMETER  
SYMBOL  
UNITS  
16CTQ060PbF 16CTQ060-N3 16CTQ080PbF 16CTQ080-N3 16CTQ100PbF 16CTQ100-N3  
Maximum DC  
reverse voltage  
VR  
60  
60  
80  
80  
100  
100  
V
Maximum working  
peak reverse  
voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
8
IF(AV)  
50 % duty cycle at TC = 148 °C, rectangular waveform  
A
per device  
16  
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
850  
Following any rated load  
condition and with rated  
IFSM  
A
V
RRM applied  
10 ms sine or 6 ms rect. pulse  
275  
Non-repetitive avalanche energy per leg  
EAS  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
Revision: 25-Aug-11  
Document Number: 94146  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-16CTQ100-N3 替代型号

型号 品牌 替代类型 描述 数据表
16CTQ100 VISHAY

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16CTQ100PBF VISHAY

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