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VS-12CTQ035-N3 PDF预览

VS-12CTQ035-N3

更新时间: 2024-01-05 22:07:17
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 169K
描述
Schottky Rectifier, 2 x 6 A

VS-12CTQ035-N3 技术参数

生命周期:Obsolete包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.45其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.73 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:690 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:35 V最大反向电流:800 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-12CTQ035-N3 数据手册

 浏览型号VS-12CTQ035-N3的Datasheet PDF文件第1页浏览型号VS-12CTQ035-N3的Datasheet PDF文件第2页浏览型号VS-12CTQ035-N3的Datasheet PDF文件第3页浏览型号VS-12CTQ035-N3的Datasheet PDF文件第5页浏览型号VS-12CTQ035-N3的Datasheet PDF文件第6页浏览型号VS-12CTQ035-N3的Datasheet PDF文件第7页 
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series  
www.vishay.com  
Vishay Semiconductors  
175  
170  
165  
160  
155  
150  
5.0  
D = 0.20  
D = 0.25  
D = 0.33  
D = 0.50  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
D = 0.75  
DC  
RMS limit  
Square wave (D = 0.50)  
80 % rated VR applied  
DC  
See note (1)  
0
4
8
10  
2
0
2
4
6
8
10  
6
IF(AV) - Average Forward Current (A)  
IF(AV) - Average Forward Current (A)  
Fig. 5 - Maximum Allowable Case Temperature vs. Average  
Forward Current (Per Leg)  
Fig. 6 - Forward Power Loss Characteristics (Per Leg)  
1000  
At any rated load condition  
and with rated VRRM applied  
following surge  
100  
10  
100  
10 000  
1000  
tp - Square Wave Pulse Duration (µs)  
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)  
L
High-speed  
switch  
IRFP460  
D.U.T.  
Freewheel  
diode  
Rg = 25 Ω  
Vd = 25 V  
+
Current  
monitor  
40HFL40S02  
Fig. 8 - Unclamped Inductive Test Circuit  
Note  
(1)  
Formula used: TC = TJ - (Pd + PdREV) x RthJC  
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR  
Revision: 22-Aug-11  
Document Number: 94130  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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